參數(shù)資料
型號： M58LW032A
廠商： 意法半導體
英文描述： 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體
文件頁數(shù)： 57/61頁
文件大?。?/td> 856K
代理商： M58LW032A
60/61
REVISION HISTORY
Table 32. Document Revision History
Date
Version
Revision Details
February 2001
-01
First Issue (Data Brief)
17-Sep-2001
-02
Expanded to full Product Preview.
27-Sep-2001
-03
Changes on Table 18, Asynchronous Write and Latch Controlled Write AC
Characteristics, Write Enable Controlled
Changes on Table 20, Synchronous Burst Read AC Characteristics
1-Feb-2002
-04
Status Register section and Table clarified, Burst Configuration Register Table
clarified, Block Protect, Blocks Unprotect and Protection Register Program
flowcharts added, Reset, Power-Down and Power-up AC Characteristics Table
modified.
12-Mar-2002
-05
Document Status changed to Preliminary Data. Table 18, tWHGL timing modified,
Table 19, tLHGL and tEHGL timings modified. IDD5 modified in DC Characteristics
table, TLEAD removed from Absolute Maximum Ratings table. TFBGA64 Not
Connected pins changed to Do Not Use.
07-May-2002
-06
Reference to Temporary Unprotect removed from Word Program Command section,
TFBGA package dimensions added to description. Block Protect and Blocks
Unprotect Flowcharts clarified, Protection Register Program description and
Flowchart clarified, Status Register VPP Status bit description clarified. Document
Status changed to Datasheet.
04-Jul-2002
-07
110ns speed class added.
06-Aug-2002
7.1
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot.
(revision version 07 equals 7.0).
Description of Reset/Power-Down pin, RP, specified. VDD, VDDQ, VSS and VSSQ pin
descriptions modified. Table 24,Ordering Information Scheme modified.
11-Feb-2003
7.2
Revision History moved to end of document. Block Protect setup command address
modified in Table 6, Commands. CFI, Extended Query Information table descriptions
clarified. Protection Register Program Flowchart and Pseudo code clarified. Table 9,
Program, Erase Times and Program Erase Endurance Cycles modified.
相關(guān)PDF資料
PDF描述
M58LW032A110N1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110N6T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110ZA1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110ZA6T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A90N1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW032A110N1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110N6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110ZA1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A110ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A90N1 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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