- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄299436 > M58LW032A (意法半導(dǎo)體) 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | M58LW032A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 16/61頁(yè) |
| 文件大?。?/td> | 856K |
| 代理商： | M58LW032A |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)當(dāng)前第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)
23/61
Table 6. Commands
Note: 1. X Don’t Care; RA Read Address, RD Read Data, IDA Identifier Address, IDD Identifier Data, SRD Status Register Data, PA Program
Address; PD Program Data, QA Query Address, QD Query Data, BA Any address in the Block, BCR Burst Configuration Register
value.
3. For Identifier addresses and data refer to table 7, Read Electronic Signature.
4. For Query Address and Data refer to Appendix B, CFI.
Table 7. Read Electronic Signature
Note: 1. SBA is the Start Base Address of each block, BCR is Burst Configuration Register data, PRD is Protection Register Data.
Command
Cycles
Bus Operations
1st Cycle
2nd Cycle
Subsequent
Final
Op.
Addr. Data
Op.
Addr.
Data
Op.
Addr. Data Op.
Addr. Data
Read Memory Array
≥ 2 Write
X
FFh
Read
RA
RD
Read Electronic Signature
≥ 2 Write
X
90h
Read
IDA(3)
IDD(3)
Read Status Register
2
Write
X
70h
Read
X
SRD
Read Query
≥ 2 Write
X
98h
Read
QA(4)
QD(4)
Clear Status Register
1
Write
X
50h
Block Erase
2
Write
X
20h
Write
BA
D0
Word Program
2
Write
X
40h
10h
Write
PA
PD
Write to Buffer and
Program
4 + N Write
BA
E8h
Write
BA
N
Write
PA
PD Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Set Burst Configuration
Register
2
Write
X
60h
Write
BCR
03h
Block Protect
2
Write
X
60h
Write
BA
01h
Blocks Unprotect
2
Write
X
60h
Write
X
D0h
Protection Register
Program
2
Write
X
C0h
Write
PRA
PRD
Code
Address (A21-A1)
Data (DQ15-DQ0)
Manufacturer Code
000000h
0020h
Device Code
000001h
8816h
Block Protection Status
SBA+02h
0000h (Block Unprotected)
0001h (Block Protected)
Burst Configuration Register
000005h
BCR
Protection Register
000080h(2)
PRD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M58LW032A110N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A90N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032A110N1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA6T | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A90N1 | 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。