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參數(shù)資料
| 型號(hào)： | M58LW032A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁數(shù)： | 35/61頁 |
| 文件大?。?/td> | 856K |
| 代理商： | M58LW032A |
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Figure 19. Synchronous Burst Read - Continuous - Valid Data Ready Output
Note: 1. Valid Data Ready = Valid Low during valid clock edge (M8 = 0)
2. V= Valid output, NV= Not Valid output.
3. R is an open drain output with an internal pull up resistor of 1M
. Depending on the Valid Data Ready pin capacitance load an
external pull up resistor must be chosen according to the system clock period.
Table 20. Synchronous Burst Read AC Characteristics
Note: For other timings see Table 15, Asynchronous Bus Read Characteristics.
Symbol
Parameter
Test Condition
M58LW032A
Unit
90
110
tAVKH
Address Valid to Active Clock Edge
E = VIL
Min
7
ns
tAVLH
Address Valid to Latch Enable High
E = VIL
Min
10
ns
tELKH
Chip Enable Low to Active Clock Edge
E = VIL
Min
10
ns
tELLH
Chip Enable Low to Latch Enable High
E = VIL
Min
10
ns
tGLKH
Output Enable Low to Valid Clock Edge
E = VIL, L = VIH
Min
20
ns
tKHAX
Valid Clock Edge to Address Transition
E = VIL
Min
5
ns
tKHLL
Valid Clock Edge to Latch Enable Low
E = VIL
Min
0
ns
tKHLH
Valid Clock Edge to Latch Enable High
E = VIL
Min
0
ns
tKHQX
Valid Clock Edge to Output Transition
E = VIL, G = VIL, L = VIH
Min
3
ns
tLLKH
Latch Enable Low to Valid Clock Edge
E = VIL
Min
6
ns
tLLLH
Latch Enable Low to Latch Enable High
E = VIL
Min
6
ns
tKHQV
Valid Clock Edge to Output Valid
E = VIL, G = VIL, L = VIH
Max
10
ns
tQVKH
Output Valid to Active Clock Edge
E = VIL, G = VIL, L = VIH
Min
5
ns
tRLKH
Valid Data Ready Low to Valid Clock Edge
E = VIL, G = VIL, L = VIH
Min
5
ns
AI05510
K
Output (2)
V
NV
V
tRLKH
R
V
(3)
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| M58LW032A110ZA1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
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| M58LW032A90N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032A110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A90N1 | 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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