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參數(shù)資料
| 型號(hào)： | M58LW032A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體 |
| 文件頁(yè)數(shù)： | 4/61頁(yè) |
| 文件大小： | 856K |
| 代理商： | M58LW032A |
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one cycle before. Valid Data Ready Low, VOL, in-
dicates that the data is not, or will not be valid. Val-
id Data Ready in a high-impedance state indicates
that valid data is or will be available.
Unless Synchronous Burst Read has been select-
ed, Valid Data Ready is high-impedance. It may be
tied to other components with the same Valid Data
Ready signal to create a unique System Ready
signal.
The Valid Data Ready, R, output has an internal
pull-up resistor of approximately 1 M
powered
from VDDQ, designers should use an external pull-
up resistor of the correct value to meet the external
timing requirements for Valid Data Ready rising.
Refer to Figure 19.
Ready/Busy (RB). The Ready/Busy output, RB,
is an open-drain output that can be used to identify
if the Program/Erase Controller is currently active.
When Ready/Busy is high impedance, the memo-
ry is ready for any Read, Program or Erase opera-
tion. Ready/Busy is Low, VOL, during Program and
Erase operations. When the device is busy it will
not accept any additional Program or Erase com-
mands except Program/Erase Suspend. When the
Program/Erase Controller is idle, or suspended,
Ready Busy can float High through a pull-up resis-
tor.
The use of an open-drain output allows the Ready/
Busy pins from several memories to be connected
to a single pull-up resistor. A Low will then indicate
that one, or more, of the memories is busy.
Ready/Busy is not Low during a reset unless the
reset was applied when the Program/Erase Con-
troller was active; Ready/Busy can rise before Re-
set/Power-Down rises.
Program/Erase Enable (VPP). The
Program/
Erase Enable input, VPP, is used to protect all
blocks, preventing Program and Erase operations
from affecting their data.
Program/Erase Enable must be kept High during
all Program/Erase Controller operations, other-
wise the operations is not guaranteed to succeed
and data may become corrupt.
VDD Supply Voltage. VDD provides the power
supply to the internal core of the memory device.
It is the main power supply for all operations
(Read, Program and Erase).
VDDQ Supply Voltage. VDDQ provides the power
supply to the I/O pins and enables all Outputs to
be powered independently from VDD. VDDQ can be
tied to VDD or can use a separate supply.
It is recommended to power-up and power-down
VDD and VDDQ together to avoid any condition that
would result in data corruption.
VSS Ground. Ground, VSS, is the reference for
the core power supply. It must be connected to the
system ground.
VSSQ Ground. VSSQ ground is the reference for
the input/output circuitry driven by VDDQ. VSSQ
must be connected to VSS.
Note: Each device in a system should have
VDD and VDDQ decoupled with a 0.1F ceramic
capacitor close to the pin (high frequency, in-
herently low inductance capacitors should be
as close as possible to the package). See Fig-
ure 10, AC Measurement Load Circuit.
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| M58LW032A110N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA6T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A90N1T | 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M58LW032A110N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A110ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory |
| M58LW032A90N1 | 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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