參數(shù)資料
型號(hào)： M58LW032A110ZA1T
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體
文件頁(yè)數(shù)： 6/61頁(yè)
文件大?。?/td> 856K
代理商： M58LW032A110ZA1T
14/61
put Enable must remain High, VIH, during the
whole Asynchronous Bus Write operation. See
Figures 15 and 17 Asynchronous Latch Controlled
Write AC Waveforms, and Tables 18 and 19,
Asynchronous Write and Latch Controlled Write
AC Characteristics, for details of the timing re-
quirements.
Output Disable. The Data Inputs/Outputs are in
the high impedance state when the Output Enable
is High.
Standby. When Chip Enable is High, VIH, the
memory enters Standby mode and the Data In-
puts/Outputs pins are placed in the high imped-
ance state regardless of Output Enable or Write
Enable. The Supply Current is reduced to the
Standby Supply Current, IDD1.
During Program or Erase operations the memory
will continue to use the Program/Erase Supply
Current, IDD3, for Program or Erase operations un-
til the operation completes.
Automatic Low Power. If there is no change in
the state of the bus for a short period of time during
Asynchronous Bus Read operations the memory
enters Auto Low Power mode where the internal
Supply Current is reduced to the Auto-Standby
Supply Current, IDD5. The Data Inputs/Outputs will
still output data if a Bus Read operation is in
progress.
Automatic Low Power is only available in Asyn-
chronous Read modes.
Power-Down. The memory is in Power-Down
mode when Reset/Power-Down, RP, is Low. The
power consumption is reduced to the Power-Down
level, IDD2, and the outputs are high impedance,
independent of Chip Enable, Output Enable or
Write Enable.
Table 2. Asynchronous Bus Operations
Note: 1. X = Don’t Care VIL or VIH. High = VIH or VHH.
Bus Operation
Step
E
G
W
RP
L
A1-A21
DQ0-DQ15
Asynchronous Bus Read
VIL
VIH
High
VIL
Address
Data Output
Asynchronous Latch
Controlled Bus Read
Address Latch
VIL
VIH
High
VIL
Address
High Z
Read
VIL
VIH
High
VIH
X
Data Output
Asynchronous Page Read
VIL
VIH
High
VIL
Address
Data Output
Asynchronous Bus Write
VIL
VIH
VIL
High
VIL
Address
Data Input
Asynchronous Latch
Controlled Bus Write
Address Latch
VIL
VIH
VIL
High
VIL
Address
Data Input
Output Disable
VIL
VIH
High
X
High Z
Standby
VIH
X
High
X
High Z
Power-Down
X
VIL
X
High Z
相關(guān)PDF資料
PDF描述
M58LW032A110ZA6T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A90N1T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW032A110ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A90N1 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032A90N1T 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 90NS 56TSOP - Tape and Reel
M58LW032A90N6 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032A90N6T 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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