參數(shù)資料
型號(hào)： M58LW032A110ZA1T
廠(chǎng)商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
中文描述： 32兆位的2Mb x16插槽，統(tǒng)一座，突發(fā)3V電源快閃記憶體
文件頁(yè)數(shù)： 44/61頁(yè)
文件大?。?/td> 856K
代理商： M58LW032A110ZA1T
49/61
Table 31. Extended Query information
Note: 1. Bit7 to bit4 are coded in Hexadecimal and scaled in Volt while bit3 to bit0 are in Binary Code Decimal and scaled in mV.
Address
offset
Address
A21-A2
Data (Hex)
x16 Bus Width
Description
(P)h
31h
50h
"P"
Query ASCII string - Extended Table
(P+1)h
32h
52h
"R"
(P+2)h
33h
49h
"I"
(P+3)h
34h
31h
Major version number
(P+4)h
35h
31h
Minor version number
(P+5)h
36h
CEh
Optional Feature: (1=yes, 0=no)
bit0, Chip Erase Supported (0=no)
bit1, Suspend Erase Supported (1=yes)
bit2, Suspend Program Supported (1=yes)
bit3, Protect/Unprotect Supported (1=yes)
bit4, Queue Erase Supported (0=no)
bit5, Instant Individual Block locking (0=no)
bit6, Protection bits supported (1=yes)
bit7, Page Read supported (1=yes)
bit8, Synchronous Read supported (1=yes)
Bits 9 to 31 reserved for future use
(P+6)h
37h
01h
(P+7)h
38h
00h
(P+8)h
39h
00h
(P+9)h
3Ah
01h
Function allowed after Suspend:
Program allowed after Erase Suspend (1=yes)
Bit 7-1 reserved for future use
(P+A)h
3Bh
01h
Block Status Register
bit0, Block Protect Bit status active (1=yes)
bit1, Block Lock-Down Bit status, not supported
bits 2 to 15 reserved for future use
(P+B)h
3Ch
00h
(P+C)h
3Dh
33h
VDD OPTIMUM Program/Erase voltage conditions
(P+D)h
3Eh
00h
VPP OPTIMUM Program/Erase voltage conditions
(P+E)h
3Fh
01h
OTP protection: No. of protection register fields
(P+F)h
40h
80h
Protection Register’s start address, least significant bits
(P+10)h
41h
00h
Protection Register’s start address, most significant bits
(P+11)h
42h
03h
n where 2n is number of factory reprogrammed bytes
(P+12)h
43h
03h
n where 2n is number user programmable bytes
(P+13)h
44h
04h
Page Read: 2n Bytes (n = bits 0-7)
(P+14)h
45h
03h
Synchronous mode configuration fields
(P+15)h
46h
01h
n where 2n+1 is the number of Words for the burst Length = 4
(P+16)h
47h
02h
n where 2n+1 is the number of Words for the burst Length = 8
(P+17)h
48h
07h
Burst Continuous
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M58LW032A110ZA6T 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M58LW032A110ZA6T 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
M58LW032A90N1 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032A90N1T 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 32MBIT 2MX16 90NS 56TSOP - Tape and Reel
M58LW032A90N6 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M58LW032A90N6T 功能描述:閃存 4Mx8 or 2Mx16 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線(xiàn)寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪(fǎng)問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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