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參數(shù)資料
| 型號： | M52D16161A-10BG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA60 |
| 封裝： | 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60 |
| 文件頁數(shù)： | 6/29頁 |
| 文件大?。?/td> | 771K |
| 代理商： | M52D16161A-10BG |
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ES MT
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
M52D16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.5
6/29
-10
-15
Parameter
Symbol
Min
10
15
-
-
Max
Min
15
15
-
-
Max
Unit
Note
CAS Latency =3
CAS Latency =2
CAS Latency =3
CAS Latency =2
CLK cycle time
t
CC
1000
1000
ns
1
9
12
12
12
CLK to valid
output delay
t
SAC
ns
1
Output data hold time
t
OH
2.5
-
2.5
-
ns
2
CLK high pulse width
t
CH
3
-
3
-
ns
3
CLK low pulse width
t
CL
3
-
3
-
ns
3
Input setup time
SS
3
-
4
-
ns
3
Input hold time
t
SH
1
-
2
-
ns
3
CLK to output in Low-Z
t
SLZ
1
-
-
7
1
-
-
9
ns
2
CAS Latency =3
CLK to output in
Hi-Z
CAS Latency =2
t
SHZ
-
8
-
9
ns
-
*All AC parameters are measured from half to half.
Note:
1.Parameters depend on programmed CAS latency.
2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.
3.Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the
parameter.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M52D16161A-10TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M52D32162A | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52D32162A-10BG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52D32162A-10TG | 1M x 16Bit x 2Banks Synchronous DRAM |
| M52D32162A-7.5BG | 1M x 16Bit x 2Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M52D16161A-10BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D16161A-10TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M52D16161A-10TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D16161A-6BIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
| M52D16161A-6TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM |
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