參數(shù)資料
型號: M52D16161A-10BG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 512K x 16Bit x 2Banks Synchronous DRAM
中文描述: 1M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA60
封裝: 6.40 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60
文件頁數(shù): 17/29頁
文件大小: 771K
代理商: M52D16161A-10BG
ES MT
Page Write Cycle at Different Bank @Burst Length = 4
M52D16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Apr. 2007
Revision
:
1.5
17/29
*Note: 1.To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2.To interrupt burst write by row precharge, both the write and the precharge banks must be the same.
CLOCK
CKE
CS
RAS
CAS
BA
ADDR
A10/AP
WE
DQM
HIGH
Row Active
(A-Bank)
Row Active
(B-Bank)
Write
(A-Bank)
Precharge
(Both Banks)
: Don't care
DQ
Write
(A-Bank)
Write
(B-Bank)
Write
(B-Bank)
DAa0
DAa1 DAa2
DAa3
DBb0
DBb1
DBb2 DBb3
DAc0
DAc1
DBd0
DBd1
RAa
RBb
RAa
CAa
RBb
CBb
CAc
CBd
*Note2
t
CDL
t
RDL
*Note1
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M52D16161A-10BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52D16161A-10TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M52D16161A-10TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52D16161A-6BIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM
M52D16161A-6TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Mobile Synchronous DRAM