參數(shù)資料
型號: M50FLW040AK5TP
廠商: 意法半導(dǎo)體
英文描述: 4-Mbit (5 】 64 Kbyte blocks + 3 】 16 】 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory
中文描述: 4兆位(5】64字節(jié)塊3】16】4 Kbyte的)3 - V電源供電固件集線器/低引腳數(shù)的閃存
文件頁數(shù): 26/64頁
文件大小: 338K
代理商: M50FLW040AK5TP
Command interface
M50FLW040A, M50FLW040B
26/64
4
Command interface
All Bus Write operations to the device are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. An internal
Program/Erase Controller handles all timings, and verifies the correct execution of the
Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor the progress or the result of the operation.
The Command Interface reverts to the Read mode when power is first applied, or when
exiting from Reset. Command sequences must be followed exactly. Any invalid combination
of commands will be ignored. See
Table 11
for the available Command Codes.
Table 11.
The following commands are the basic commands used to read from, write to, and configure
the device. The following text descriptions should be read in conjunction with
Table 13
.
4.0.1
Read Memory Array command
The Read Memory Array command returns the device to its Read mode, where it behaves
like a ROM or EPROM. One Bus Write cycle is required to issue the Read Memory Array
command and return the device to Read mode. Once the command is issued, the device
remains in Read mode until another command is issued. From Read mode, Bus Read
operations access the memory array.
If the Program/Erase Controller is executing a Program or Erase operation, the device will
not accept any Read Memory Array commands until the operation has completed.
For a multibyte read, in the FWH mode, the address, that was transmitted with the
command, will be automatically aligned, according to the MSIZE granularity. For example, if
MSIZE=7, regardless of any values that are provided for A6-A0, the first output will be from
the location for which A6-A0 are all ‘0’s.
Command codes
Hexadecimal
Command
10h
Alternative Program Setup, Double/Quadruple Byte Program Setup, Chip Erase
Confirm
20h
Block Erase Setup
32h
Sector Erase Setup
40h
Program, Double/Quadruple Byte Program Setup
50h
Clear Status Register
70h
Read Status Register
80h
Chip Erase Setup
90h
Read Electronic Signature
B0h
Program/Erase Suspend
D0h
Program/Erase Resume, Block Erase Confirm, Sector Erase Confirm
FFh
Read Memory Array
相關(guān)PDF資料
PDF描述
M50FLW040AN5G 4-Mbit (5 】 64 Kbyte blocks + 3 】 16 】 4 Kbyte sectors) 3-V supply Firmware Hub / low-pin count Flash memory
M50FLW080BK5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BK5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BN5P 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BN5TP 8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M50FLW040AN1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN1G 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN1P 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW040AN1TG 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit (5 x 64KByte Blocks + 3 x 16 x 4KByte Sectors) 3V Supply Firmware Hub / Low Pin Count Flash Memory