
M440T513Y
20/26
Data Retention Mode
Should the supply voltage decay, the RAM will au-
tomatically deselect, write protecting itself when
VCC falls between VPFD (max), VPFD (min) win-
dow. All outputs become high impedance and all
inputs are treated as “Don't care.”
Note: A power failure during a WRITE cycle may
corrupt data at the current addressed location, but
does not jeopardize the rest of the RAM's content.
At voltages below VPFD (min), the memory will be
in a write protected state, provided the VCC fall
time is not less than tF. The M440T513Y may re-
spond to transient noise spikes on VCC that cross
into the deselect window during the time the de-
vice is sampling VCC.Therefore, decoupling of the
power supply lines is recommended. When VCC
drops below VSO, the control circuit switches pow-
er to the internal battery, preserving data and pow-
ering the clock. The internal energy source will
maintain data in the M440T513Y for an accumulat-
ed period of at least 5 years at 45°C. As system
power rises above VSO, the battery is disconnect-
ed, and the power supply is switched to external
VCC. Write protection continues until VCC reaches
VPFD (min) plus tER (min). Normal RAM operation
can resume tER after VCC exceeds VPFD (max).
Refer to Application Note (AN1012) on the ST
Web Site for more information on battery life.
Figure 15. Power Down/Up Mode AC Waveforms
Table 12. Power Down/Up Trip Points DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = –15 to 75°C; VCC = 4.5 to 5.5V (except where noted).
2. All voltages referenced to VSS.
3. At 45°C, VCC = 0V.
Symbol
Parameter(1,2)
M440T513Y
Unit
Min
Typ
Max
VPFD
Power-fail Deselect Voltage
4.0
4.5
V
VSO
Battery Back-up Switchover Voltage
VBAT
V
tDR
(3)
Expected Data Retention Time
5
YEARS
AI04792
VCC
INPUTS
OUTPUTS
DON'T CARE
HIGH-Z
tFB
tR
tRB
VALID
RECOGNIZED
VPFD (max)
VPFD (min)
VSO
tREC
tF
tDR
VSS