參數(shù)資料
型號: M39832-B12WNE6T
廠商: 意法半導體
英文描述: RECTIFIER, BRIDGE, 600V, 6A, PB-6
中文描述: 單芯片8兆1兆x8或512KB的x16閃存和256千位并行EEPROM存儲器
文件頁數(shù): 27/36頁
文件大小: 253K
代理商: M39832-B12WNE6T
E
(1)
AI01954
G
W
A0-A18
DQ0-DQ7
VALID
VALID
VCC
tVCHWL
tEHWH
tEHEL
tWLEL
tAVEL
tEHGL
tELAX
tEHDX
WRITE CYCLE
tDVEH
tELEH
tGHEL
RB
tWHRL
Figure 14. Write AC Waveforms, E Controlled
Notes:
Address are latched on the falling edge of E, Data is latched on the rising edge of E.
E is either EF when EE = V
IH
or EE when EF = V
IH
.
27/36
M39832
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M39832-B15WNE1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
M39832-B15WNE6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
M39832NE 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
M39832-T12WNE1T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
M39832-T12WNE6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory