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參數(shù)資料
| 型號(hào)： | M39832-B12WNE6T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RECTIFIER, BRIDGE, 600V, 6A, PB-6 |
| 中文描述： | 單芯片8兆1兆x8或512KB的x16閃存和256千位并行EEPROM存儲(chǔ)器 |
| 文件頁數(shù)： | 25/36頁 |
| 文件大?。?/td> | 253K |
| 代理商： | M39832-B12WNE6T |
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Symbol
Alt
Parameter
Test Condition
M39832
Unit
-120
-150
Min
Max
Min
Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
),
G = V
IL
120
150
ns
t
AVQV
t
ACC
Address Valid to Output
Valid
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
),
G = V
IL
120
150
ns
t
ELQX
(1)
t
LZ
Chip Enable Low to Output
Transition
G = V
IL
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to Output
Valid
G = V
IL
120
150
ns
t
GLQX
(1)
t
OLZ
Output Enable Low to
Output Transition
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
)
0
0
ns
t
GLQV
(2)
t
OE
Output Enable Low to
Output Valid
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
)
55
55
ns
t
EHQX
t
OH
Chip Enable High to
Output Transition
G = V
IL
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to
Output Hi-Z
G = V
IL
40
40
ns
t
GHQX
t
OH
Output Enable High to
Output Transition
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
)
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to
Output Hi-Z
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
)
40
40
ns
t
AXQX
t
OH
Address Transition to
Output Transition
(EE, EF) = (V
IL
, V
IH
) or
(EE, EF) = (V
IH
, V
IL
),
G = V
IL
0
0
ns
t
EHFL
t
CED
EE (EF) Active to EF (EE)
100
100
ns
Notes:
1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of EE (or EF) without increasing t
ELQV
.
Table 13. Read AC Characteristics
(T
A
= 0 to 70
°
C or –20 to 85
°
C; V
CC
= 3.3V
±
0.3V)
25/36
M39832
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M39832-B15WNE1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-B15WNE6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832NE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-T12WNE1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
| M39832-T12WNE6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
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