參數(shù)資料
型號(hào)： M39432
廠商： 意法半導(dǎo)體
英文描述： Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM)
中文描述： 單芯片的4Mb并行閃存和256Kbit EEPROM存儲(chǔ)器（單片4Mb的閃速和256Kb的并行的EEPROM）
文件頁(yè)數(shù)： 7/30頁(yè)
文件大?。?/td> 247K
代理商： M39432
Read the Flash Block Identifier
The Flash block identifier can be read with two
methods: a Read operation or a Read instruction.
Read Operation.
The Flash block identifier (E3h)
can be read with a single Read operation with
specific logic levels applied on A0, A1, A6 and the
V
ID
level on A9 (see Table 5).
Read Instruction.
The Flash block identifier can
also be read with an instruction composed of 4
operations: 3 specific Write operations and a Read
(see Table 4).
Read the EEPROM Block Identifier
The EEPROM block identifier (64 bytes, user de-
fined) can be read with a single Read operation with
A6 = ’0’ and A9 = V
ID
(see Table 5).
Read the OTP Row
The OTP row is mapped in the EEPROM block
(EE = ’0’, EF = ’1’). Read of the OTP row (64 bytes)
is by an instruction (see Table 4) composed of three
specific Write operations of data bytes at three
specific memory locations (each location in a dif-
ferent page) before reading the OTP row content.
When accessing the OTP row, only the LSB ad-
dresses (A6 to A0) are decoded where A6 must be
’0’.
Each Read of the OTP row has to be followed by
the Return instruction (see Table 4).
Read the Flash Sector Protection Status
Reading the Flash sector protection status is by an
instruction similar to the Read Manufacturer iden-
tifier instruction, the only difference being the value
of the logic levels applied on A0, A1, A6, while A16,
A17 and A18 define the Flash sector whose protec-
tion has to be verified. Such a read instruction will
output a 01h if the Flash sector is protected and a
00h if the Flash sector is not protected.
The Flash sector protection status can also be
verified with a Read operation (see chapter: Flash
block specific features), with V
ID
on A9.
Read the Status Bits
The M39432 provides several Write operation
status flags which may be used to minimize the
application write (or erase or program) time. These
signals are available on the I/O port bits when
programming (or erasing) are in progress. It should
be noted that the Ready/Busy pin also reflects the
status of the EEPROM Write (the Ready/Busy pin
does not reflect the status of the Flash Program-
ming/Erasing).
Data Polling flag, DQ7.
When Erasing or Pro-
gramming into the Flash block (or when Writing into
the EEPROM block), bit DQ7 outputs the comple-
ment of the bit being entered for Program-
ming/Writing on DQ7. Once the Program
instruction or the Write operation is performed, the
true logic value is read on DQ7 (in a Read opera-
tion).
Flash memory block specific features:
– Data Polling is effective after the fourth W pulse
(for programming) or after the sixth W pulse (for
Erase). It must be performed at the address
being programmed or at an address within the
Flash sector being erased.
– During an Erase instruction, DQ7 outputs a ’0’.
After completion of the instruction, DQ7 will out-
put the last bit programmed (that is a ’1’ after
erasing).
– if the byte to be programmed is in a protected
Flash sector, the instruction is ignored.
– If all the Flash sectors to be erased are pro-
tected, DQ7 will be set to ’0’ for about 100
μ
s, and
then return to the previous addressed byte. No
erasure will be performed.
– if all sectors are protected, a Bulk Erase instruc-
tion is ignored.
Toggle flag, DQ6.
The M39432 also offers another
way for determining when the EEPROM write or
the Flash memory Program instruction is com-
pleted. During the internal Write operation, the DQ6
will toggle from ’0’ to ’1’ and ’1’ to ’0’ on subsequent
attempts to read any byte of the memory, when
either G , EE or EF is low.
When the internal cycle is completed the toggling
will stop and the data read on DQ0-DQ7 is the
addressed memory byte. The device is now acces-
sible for a new Read or Write operation. The opera-
tion is completed when two successive reads yield
the same output data.
EF
EE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
Flash
V
IL
V
IH
Data
Polling
Toggle
Flag
Error
Flag
X
Erase
Time-out
X
X
X
EEPROM
V
IH
V
IL
Data
Polling
Toggle
Flag
X
X
X
X
X
X
Note:
X = Not guaranteed value, can be read either ’1’ or ’0’.
Table 6. Status Bit
7/30
M39432
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