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參數(shù)資料
| 型號： | M39432 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Single Chip 4Mbit Flash and 256Kbit Parallel EEPROM Memory(單片4Mb閃速和256Kb并行EEPROM) |
| 中文描述： | 單芯片的4Mb并行閃存和256Kbit EEPROM存儲器（單片4Mb的閃速和256Kb的并行的EEPROM） |
| 文件頁數(shù)： | 6/30頁 |
| 文件大?。?/td> | 247K |
| 代理商： | M39432 |
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The M39432 set of instructions includes:
– Program a byte in the Flash block
– Read a Flash sector protection status
– Erase instructions: Flash Sector Erase, Flash
Block Erase, Flash Sector Erase Suspend, Flash
Sector Erase Resume
– EEPROM power down
– Deep power down
– Set/Reset the EEPROM software write protec-
tion (SDP)
– OTP row access
– Reset and Return
– Read identifiers: read the manufacturer identi-
fier, Read the Flash block identifier
These instructions are detailed in Table 4.
For efficient decoding of the instruction, the two first
bytes of an instruction are the coded cycles and are
followed by a command byte or a confirmation byte.
The coded cycles consist of writing the data AAh at
address 5555h during the first cycle and data 55h
at address 2AAAh during the second cycle.
In the specific case of the Erase instruction, the
instruction expects confirmation by two additional
coded cycles.
POWER SUPPLY and CURRENT CONSUMP-
TION
EEPROM Power Down.
The M39432 can be set
with the EEPROM in power down with the help of
the EEPROM power down instruction (see Table
4). Once the EEPROM power down instruction is
decoded, the EEPROM block cannot be accessed
unless a further Return instruction is decoded.
Deep Power Down.
The M39432 can be set in the
lowest I
CC
consumption mode with the help of the
Deep Power Down instruction (see Table 4). Once
the instruction is decoded, the device is set in a
sleep mode until a Reset instruction is decoded.
Power Up.
The M39432 internal logic is reset upon
a power-up condition to Read memory status. Any
Write operation in EEPROM is inhibited during the
first 5 ms following the power-up.
Either EF, EE or W must be tied to V
IH
during
Power-up for the maximum security of the data
contents and to remove the possibility of a byte
being written on the first rising edge of EF, EE or
W. Any write cycle initiation is locked when Vcc is
below V
LKO
.
READ
Read operations and instructions can be used to:
– read the contents of the Memory Array (Flash
block and EEPROM block)
– read the Memory Array (Flash block and
EEPROM block) status and identifiers.
Read data (Flash and EEPROM blocks)
Both Chip Enable EF (or EE) and Output Enable
(G) must be low in order to read the data from the
memory.
Read the Manufacturer Identifier
The manufacturer’s identifier can be read with two
methods: a Read operation or a Read instruction.
Read Operation.
The manufacturer’s identifier can
be read with a Read operation with specific logic
levels applied on A0, A1, A6 and the V
ID
level (V
ID
= 12V + 0.5V) on A9 (see Table 5).
Read Instruction.
The manufacturer’s identifier
can also be read with a single instruction composed
of 4 operations: 3 specific Write operations (see
Table 4) and a Read which outputs the Manufac-
turer identifier, the Flash block identifier or the Flash
sector protection status (depending on the levels
applied on A0, A1, A6, A16, A17 and A18.
Identifier
EF
EE
G
W
A0
A1
A6
A9
Other
Addresses
DQ0 - DQ7
Read the
Manufacturer
Identifier
V
IL
V
IH
V
IL
V
IH
V
IL
V
IL
V
IL
V
ID
Don’t Care
20h
Read the Flash
Block Identifier
V
IL
V
IH
V
IL
V
IH
V
IH
V
IL
V
IL
V
ID
Don’t Care
0E3h
Read the
EEPROM Block
Identifier
V
IH
V
IL
V
IL
V
IH
X
X
V
IL
V
ID
Don’t Care
64 bytes
user
defined
Note:
X = Don’t Care.
Table 5. Device Identifiers
6/30
M39432
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| M39432-10VNC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM |
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| M39432-12VNC6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM |
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