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參數(shù)資料
| 型號(hào)： | M390S6453ET1-C7A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 168線注冊(cè)模塊，基于256Mb電子芯片的72位ECC |
| 文件頁(yè)數(shù)： | 15/26頁(yè) |
| 文件大?。?/td> | 662K |
| 代理商： | M390S6453ET1-C7A |
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256MB, 512MB, 1GB Registered DIMM
DC CHARACTERISTICS
M390S3253ETU(1) (32M x 72, 256MB Module)
Rev. 1.4 May 2004
SDRAM
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
1,220
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
370
20
mA
Precharge standby current
in non power-down mode
I
CC2
N
530
mA
I
CC2
NS
95
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
405
60
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
575
mA
I
CC3
NS
230
mA
Operating current
(Burst mode)
I
CC4
1,400
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
2,120
380
mA
mA
2
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
7A
Unit
Note
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE & CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
1,940
mA
1
Precharge standby current
in power-down mode
I
CC2
P
I
CC2
PS
370
40
mA
Precharge standby current
in non power-down mode
I
CC2
N
710
mA
I
CC2
NS
185
Active standby current in
power-down mode
I
CC3
P
I
CC3
PS
460
110
mA
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
800
mA
I
CC3
NS
455
mA
Operating current
(Burst mode)
I
CC4
2,300
mA
1
Refresh current
Self refresh current
I
CC5
I
CC6
3,740
405
mA
mA
2
M390S6450ETU(1) (64M x 72, 512MB Module)
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noted, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
)
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