參數(shù)資料
型號(hào)： M390S6453ET1-C7A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述： 168線注冊(cè)模塊，基于256Mb電子芯片的72位ECC
文件頁(yè)數(shù)： 14/26頁(yè)
文件大小： 662K
代理商： M390S6453ET1-C7A
256MB, 512MB, 1GB Registered DIMM
Rev. 1.4 May 2004
SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1.0 * # of component
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
3.0
3.3
3.6
V
Input high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input low voltage
V
IL
-0.3
0
0.8
V
2
Output high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
CAPACITANCE(Max.)
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Parameter
Symbol
M390S3253ET1
M390S3253ETU
M390S6450ET1
M390S6450ETU
M390S6453ET1
M390S2858ET1
M390S2858ETU
Unit
Input capacitance
(A0 ~ A11)
Input capacitance
(RAS, CAS, WE)
Input capacitance
(CKE0)
Input capacitance
(CLK0)
Input capacitance
(CS0, CS2)
Input capacitance
(DQM0 ~ DQM7)
Input capacitance
(BA0 ~ BA1)
Data input/output capacitance
(DQ0~DQ63)
Data input/ouput capacitance
(CB0~CB7)
C
IN1
C
IN2
C
IN3
C
IN4
C
IN5
C
IN6
C
IN7
C
OUT1
C
OUT2
15
15
15
23
15
15
15
16
16
15
15
15
20
15
15
15
16
16
19
19
33
12
12
12
12
19
19
15
15
15
20
15
15
15
22
22
pF
pF
pF
pF
pF
pF
pF
pF
pF
1. V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
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