參數(shù)資料
型號: M36WT864TFZA
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述: 64兆位4Mb的x16插槽,多銀行,突發(fā)閃存和8兆位的SRAM為512k x16,內(nèi)存產(chǎn)品多
文件頁數(shù): 63/92頁
文件大小: 624K
代理商: M36WT864TFZA
63/92
M36WT864TF, M36WT864BF
PART NUMBERING
Table 30. Ordering Information Scheme
Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available op-
tions (Speed, Package, etc...) or for further information on any aspect of this device, please contact the
STMicroelectronics Sales Office nearest to you.
Example:
M36WT864TF
70 ZA
6
T
Device Type
M36 = MMP (Flash + SRAM)
Architecture
W = Multiple Bank, Burst mode
Operating Voltage
T = V
DDF
= 1.65V to 2.2V; V
DDS
= V
DDQF
= 2.7V to 3.3V
SRAM Chip Size & Organization
8 = 8 Mbit (512K x16-bit)
Device Function
64T = 64 Mbit (x16), Multiple Bank, Top Boot
64B = 64 Mbit (x16), Multiple Bank, Bottom Boot
B = SRAM Asynchronous 70ns
Speed
70 = 70ns
85 = 85ns
10 = 100ns
Package
ZA = LFBGA96 - 8x14mm, 8x10 ball array, 0.8mm pitch
Temperature Range
6 = –40 to 85°C
Option
T = Tape & Reel packing
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