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參數(shù)資料
| 型號： | M36WT864TFZA |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內(nèi)存產(chǎn)品多 |
| 文件頁數(shù)： | 42/92頁 |
| 文件大?。?/td> | 624K |
| 代理商： | M36WT864TFZA |
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M36WT864TF, M36WT864BF
42/92
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Conditions summarized in Table 16, Operating
and AC Measurement Conditions. Designers
should check that the operating conditions in their
circuit match the operating conditions when rely-
ing on the quoted parameters.
Table 16. Operating and AC Measurement Conditions
Figure 9. AC Measurement I/O Waveform
Note: V
DDF
= V
DDS
Figure 10. AC Measurement Load Circuit
Table 17. Device Capacitance
Note: Sampled only, not 100% tested.
Parameter
SRAM
Flash Memory
Units
70
70/ 85/ 100
Min
Max
Min
Max
V
DD
Supply Voltage
–
–
1.65
2.2
V
V
DDQ
Supply Voltage
2.7
3.3
2.7
3.3
V
V
PPF
Supply Voltage (Factory environment)
11.4
12.6
V
V
PPF
Supply Voltage (Application environment)
-0.4
V
DDQ
+0
.4
V
Ambient Operating Temperature
– 40
85
– 40
85
°C
Load Capacitance (C
L
)
30
30
pF
Input Rise and Fall Times
2
5
ns
Input Pulse Voltages
0 to V
DDF
0 to V
DDQ
V
Input and Output Timing Ref. Voltages
V
DDF
/2
V
DDQ
/2
V
AI06110
VDDF
0V
VDDF/2
AI06274
VDDQF
CL
CL includes JIG capacitance
16.7k
DEVICE
UNDER
TEST
0.1μF
VDDF
0.1μF
VDDQF
16.7k
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
8
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
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