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參數資料
| 型號： | M36WT864TFZA |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| 中文描述： | 64兆位4Mb的x16插槽，多銀行，突發(fā)閃存和8兆位的SRAM為512k x16，內存產品多 |
| 文件頁數： | 39/92頁 |
| 文件大小： | 624K |
| 代理商： | M36WT864TFZA |
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M36WT864TF, M36WT864BF
FLASH PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the Flash memory the maximum number
of Program/ Erase cycles depends on the voltage
supply used.
Table 14. Flash Program, Erase Times and Endurance Cycles
Note: 1. T
A
= –40 to 85°C; V
DD
= 1.65V to 2.2V; V
DDQ
= 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
Parameter
Condition
Min
Typ
Typical after
100k W/E
Cycles
Max
Unit
V
P
=
D
Parameter Block (4 KWord) Erase
(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit) Erase
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Parameter Block (4 KWord) Program
(3)
40
ms
Main Block (32 KWord) Program
(3)
300
ms
Word Program
(3)
10
10
100
μs
Program Suspend Latency
5
10
μs
Erase Suspend Latency
5
20
μs
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
P
=
P
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank (4Mbit) Erase
3.5
s
Bank (4Mbit) Program (Quad-Enhanced Factory Program)
t.b.a.
(4)
s
4Mbit Program
Quadruple Word
510
ms
Word/ Double Word/ Quadruple Word Program
(3)
8
100
μs
Parameter Block (4 KWord)
Program
(3)
Quadruple Word
8
ms
Word
32
ms
Main Block (32 KWord) Program
(3)
Quadruple Word
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
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相關代理商/技術參數 |
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|---|---|
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| M36WV864B10ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
| M36WV864B70ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product |
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