參數(shù)資料
型號(hào): M36WT864T85ZA6T
廠商: 意法半導(dǎo)體
英文描述: 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
中文描述: 64兆位4Mb的x16插槽,多銀行,突發(fā)閃存和8兆位的SRAM為512k x16,內(nèi)存產(chǎn)品多
文件頁(yè)數(shù): 52/92頁(yè)
文件大小: 624K
代理商: M36WT864T85ZA6T
M36WT864TF, M36WT864BF
52/92
Table 23. Flash Write AC Characteristics, Write Enable Controlled
Note: 1. Sampled only, not 100% tested.
2. t
WHEL
has the values shown when reading in the targeted bank. System designers should take this into account and may insert a
software No-Op instruction to delay the first read in the same bank after issuing a command. If it is a Read Array operation in a
different bank t
WHEL
is 0ns.
3. To be characterized.
4. Meaningful only if LF is always kept low.
Symbol
Alt
Parameter
M36WT864TF/BF
Unit
70
85
100
W
t
AVAV
t
WC
Address Valid to Next Address Valid
Min
70
(3)
85
100
ns
t
AVLH
Address Valid to Latch Enable High
Min
10
10
10
ns
t
AVWH(4)
t
WC
Address Valid to Write Enable High
Min
45
(3)
50
50
ns
t
DVWH
t
DS
Data Valid to Write Enable High
Min
45
(3)
50
50
ns
t
ELLH
Chip Enable Low to Latch Enable High
Min
10
10
10
ns
t
ELWL
t
CS
Chip Enable Low to Write Enable Low
Min
0
0
0
ns
t
ELQV
Chip Enable Low to Output Valid
Min
70
(3)
85
100
ns
t
ELKV
Chip Enable High to Clock Valid
Min
9
9
9
ns
t
GHWL
Output Enable High to Write Enable Low
Min
20
20
20
ns
t
LHAX
Latch Enable High to Address Transition
Min
10
10
10
ns
t
LLLH
Latch Enable Pulse Width
Min
10
10
10
ns
t
WHAV(4)
Write Enable High to Address Valid
Min
0
0
0
ns
t
WHAX(4)
t
AH
Write Enable High to Address Transition
Min
0
0
0
ns
t
WHDX
t
DH
Write Enable High to Input Transition
Min
0
0
0
ns
t
WHEH
t
CH
Write Enable High to Chip Enable High
Min
0
0
0
ns
t
WHEL(2)
Write Enable High to Chip Enable Low
Min
25
(3)
25
25
ns
t
WHGL
Write Enable High to Output Enable Low
Min
0
0
0
ns
t
WHLL
Write Enable High to Latch Enable Low
Min
0
0
0
ns
t
WHWL
t
WPH
Write Enable High to Write Enable Low
Min
25
25
25
ns
t
WHQV
Write Enable High to Output Valid
Min
95
(3)
110
125
ns
t
WLWH
t
WP
Write Enable Low to Write Enable High
Min
45
(3)
50
50
ns
P
t
QVVPL
Output (Status Register) Valid to V
PPF
Low
Min
0
0
0
ns
t
QVWPL
Output (Status Register) Valid to Write Protect
Low
Min
0
0
0
ns
t
VPHWH
t
VPS
V
PPF
High to Write Enable High
Min
200
200
200
ns
t
WHVPL
Write Enable High to V
PPF
Low
Min
200
200
200
ns
t
WHWPL
Write Enable High to Write Protect Low
Min
200
200
200
ns
t
WPHWH
Write Protect High to Write Enable High
Min
200
200
200
ns
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PDF描述
M36WT864B10ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T10ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864TF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B85ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
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參數(shù)描述
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