參數(shù)資料
型號(hào)： M36W832Te85ZA6S
廠商： 意法半導(dǎo)體
英文描述： 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述： 32兆位的2Mb x16插槽，引導(dǎo)塊閃存和8兆位的SRAM 512KB的x16，內(nèi)存產(chǎn)品多
文件頁數(shù)： 54/64頁
文件大?。?/td> 897K
代理商： M36W832TE85ZA6S
M36W832TE, M36W832BE
54/64
Figure 27. Double Word Program Flowchart and Pseudo Code
Note: 1. Status check of b1 (Protected Block), b3 (V
PPF
Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
AI90175b
Write 30h
Start
Write Address 1
& Data 1 (3)
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPPF Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
& Data 2 (3)
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.b3==1) /*VPPF invalid error */
error_handler ( ) ;
if (status_register.b4==1) /*program error */
error_handler ( ) ;
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
}
相關(guān)PDF資料
PDF描述
M36W832Te85ZA6T 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36WT864 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B70ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864T85ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
M36WT864B10ZA6T 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W832TE85ZA6T 功能描述:組合存儲(chǔ)器 32M (2Mx16) 85ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray
M36W832TEZA 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W832TE-ZAT 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
M36W864BE-70ZA6 制造商:Micron Technology Inc 功能描述:64M FLASH, 8M SRAM, 3V, BOT, BGA, IND - Trays
M36W864TE-70ZA6 制造商:Micron Technology Inc 功能描述:64M FLASH, 8M SRAM, 3V, TOP, BGA, IND - Trays
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