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參數(shù)資料
| 型號： | M36W832Te85ZA1S |
| 廠商： | 意法半導體 |
| 英文描述： | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| 中文描述： | 32兆位的2Mb x16插槽，引導塊閃存和8兆位的SRAM 512KB的x16，內存產(chǎn)品多 |
| 文件頁數(shù)： | 55/64頁 |
| 文件大?。?/td> | 897K |
| 代理商： | M36W832TE85ZA1S |
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55/64
M36W832TE, M36W832BE
Figure 28. Quadruple Word Program Flowchart and Pseudo Code
Note: 1. Status check of b1 (Protected Block), b3 (V
PPF
Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 to Address 4 must be consecutive addresses differing only for bits A0 and A1.
Write 56h
AI07950
Start
Write Address 1
& Data 1 (3)
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPPF Invalid
Error (1, 2)
Program
Error (1, 2)
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
Write Address 2
quadruple_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2,
addressToProgram3, dataToProgram3,
addressToProgram4, dataToProgram4)
{
writeToFlash (any_address, 0x56) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
writeToFlash (addressToProgram3, dataToProgram3) ;
/*see note (3) */
writeToFlash (addressToProgram4, dataToProgram4) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
do {
status_register=readFlash (any_address) ;
/* EF or GF must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.b3==1) /*VPPF invalid error */
error_handler ( ) ;
if (status_register.b4==1) /*program error */
error_handler ( ) ;
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
}
Write Address 3
& Data 3 (3)
Write Address 4
& Data 4 (3)
相關PDF資料 |
PDF描述 |
|---|---|
| M36W832Be85ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Te85ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TEZA | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be70ZA1S | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832Be70ZA1T | 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36W832TE85ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE85ZA6S | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE85ZA6T | 功能描述:組合存儲器 32M (2Mx16) 85ns RoHS:否 制造商:Microchip Technology 組織:512 K x 16 電源電壓-最大: 電源電壓-最小: 最大工作溫度:+ 85 C 最小工作溫度:- 20 C 封裝 / 箱體:LFBGA-48 封裝:Tray |
| M36W832TEZA | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
| M36W832TE-ZAT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product |
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