參數資料
型號: M36W832BE
廠商: 意法半導體
英文描述: 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
中文描述: 32兆位的2Mb x16插槽,引導塊閃存和8兆位的SRAM 512KB的x16,內存產品多
文件頁數: 41/64頁
文件大小: 897K
代理商: M36W832BE
41/64
M36W832TE, M36W832BE
Figure 21. SRAM Low V
DDS
Data Retention AC Waveforms, E1S Controlled
Figure 22. SRAM Low V
DDS
Data Retention AC Waveforms, E2S Controlled
Table 22. SRAM Low V
DDS
Data Retention Characteristic
Symbol
Parameter
Note: 1. Sampled only. Not 100% tested.
Test Condition
Min
Typ
Max
Unit
I
DDDR
Supply Current (Data Retention)
V
DDS
= 1.5V, E1S
V
DDS
– 0.3V,
V
IN
V
DDS
– 0.3V or V
IN
0.3V
No input may exceed V
DDS
+ 0.3V
4
20
μA
V
DR
Supply Voltage (Data Retention)
1.5
3.3
V
t
CDR
Chip Disable to Power Down
0
ns
t
R
Operation Recovery Time
70
ns
AI07970
E1S
tCDR
V
DDS
tR
DATA RETENTION MODE
V
DDS (min)
V
DDS (min)
VDR > 1.5V
E1S > V
-
0.3V and E2S < 0.3V
or E2S > V
DDS
-
0.3V
AI07982
E2S
tCDR
V
DDS
tR
DATA RETENTION MODE
V
DDS (min)
V
DDS (min)
VDR > 1.5V
E2S < 0.3V
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M36W832BE70ZA1S 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
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