參數(shù)資料
型號(hào)： M36W0R6050T1ZAQF
元件分類： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA88
封裝： 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
文件頁數(shù)： 8/22頁
文件大?。?/td> 428K
代理商： M36W0R6050T1ZAQF
DC and ac parameters
M36W0R6050T1, M36W0R6050B1
16/22
5
DC and ac parameters
This section summarizes the operating measurement conditions, and the dc and ac
characteristics of the device. The parameters in the dc and ac characteristics Tables that
follow, are derived from tests performed under the Measurement Conditions summarized in
Table 4: Operating and ac measurement conditions. Designers should check that the
operating conditions in their circuit match the operating conditions when relying on the
quoted parameters.
Figure 4.
AC measurement I/O waveform
Table 4.
Operating and ac measurement conditions
Parameter
Flash memory
PSRAM
Unit
Min
Max
Min
Max
VDDF Supply Voltage
1.7
1.95
–
V
VDDP Supply Voltage
–
1.7
1.95
V
VDDQF Supply Voltage
1.7
1.95
–
V
VPPF Supply Voltage (Factory environment)
11.4
12.6
–
V
VPPF Supply Voltage (Application
environment)
–0.4
VDDQF +0.4
–
V
Ambient Operating Temperature
–30
85
–30
85
°C
Load Capacitance (CL)30
50
pF
Input Rise and Fall Times
5
ns
Input Pulse Voltages
0 to VDDQF
0 to VDDP
V
Input and Output Timing Ref. Voltages
VDDQF/2
VDDP/2
V
AI12057
VDDQF
0V
VDDQF/2
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M36W0R6050T3 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
M36W0R6050T3ZAQE 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
M36W0R6050T3ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
M36W0R6050T4ZAQE 制造商:Micron Technology Inc 功能描述:WIRELESS - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH PSRAM 96M
M36W0R6050T4ZAQF 制造商:Micron Technology Inc 功能描述:WIRELESS - Tape and Reel
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