參數(shù)資料
型號: M36W0R6050T1ZAQF
元件分類: 存儲器
英文描述: SPECIALTY MEMORY CIRCUIT, PBGA88
封裝: 8 X 10 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-88
文件頁數(shù): 4/22頁
文件大小: 428K
代理商: M36W0R6050T1ZAQF
Signal descriptions
M36W0R6050T1, M36W0R6050B1
12/22
2.20
VPPF program supply voltage
VPPF is both a Flash Memory control input and a Flash Memory power supply pin. The two
functions are selected by the voltage range applied to the pin.
If VPPF is kept in a low voltage range (0V to VDDQF) VPPF is seen as a control input. In this
case a voltage lower than VPPLKF gives an absolute protection against Program or Erase,
while VPPF > VPP1F enables these functions (see the M58WR064HT/B datasheet for the
relevant values). VPPF is only sampled at the beginning of a Program or Erase; a change in
its value after the operation has started does not have any effect and Program or Erase
operations continue.
If VPPF is in the range of VPPHF it acts as a power supply pin. In this condition VPPF must be
stable until the Program/Erase algorithm is completed.
2.21
VSS ground
VSS is the common ground reference for all voltage measurements in the Flash memory
(core and I/O Buffers) and PSRAM components.
Note:
Each Flash memory device in a system should have its supply voltages (VDDF, VDDQF) and
the program supply voltage VPPF decoupled with a 0.1F ceramic capacitor close to the pin
(high frequency, inherently low inductance capacitors should be as close as possible to the
package). See Figure 5: AC measurement load circuit. The PCB track widths should be
sufficient to carry the required VPPF program and erase currents.
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