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參數(shù)資料
| 型號： | M36D0R6040T0ZAIF |
| 廠商： | 意法半導體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，頁）閃存和16兆位（最快1Mb × 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大小： | 329K |
| 代理商： | M36D0R6040T0ZAIF |
9/18
M36D0R6040T0, M36D0R6040B0
Table 2. Main Operating modes
Note: 1. X = Don't care.
2. L
F
can be tied to V
IH
if the valid address has been previously latched.
3. Depends on G
F
.
4. WAIT signal polarity is configured using the Set Configuration Register command. Refer to M58WR064F(T/B) datasheet for details.
Operation
E
F
G
P
W
P
L
F
RP
F
WAIT
F(4)
E1
P
E2
P
G
P
W
P
UB
P
LB
P
DQ15-DQ0
Flash Read
V
IL
V
IL
V
IH
V
IL(2)
V
IH
PSRAM must be disabled
Flash Data Out
Flash Write
V
IL
V
IH
V
IL
V
IL(2)
V
IH
Flash Data In
Flash Address
Latch
V
IL
X
V
IH
V
IL
V
IH
Flash Data Out
or Hi-Z
(3)
Flash Output
Disable
V
IL
V
IH
V
IH
X
V
IH
Any PSRAM mode is allowed
Flash Hi-Z
Flash Standby
V
IH
X
X
X
V
IH
Hi-Z
Flash Hi-Z
Flash Reset
X
X
X
X
V
IL
Hi-Z
Flash Hi-Z
PSRAM Read
Flash Memory must be disabled
V
IL
V
IH
V
IL
V
IH
V
IL
V
IL
PSRAM data
out
PSRAM Write
V
IL
V
IH
V
IH
V
IL
V
IL
V
IL
PSRAM data in
Output Disable
Any Flash mode is allowed.
V
IL
V
IH
V
IH
V
IH
X
X
PSRAM Hi-Z
PSRAM
Standby
V
IH
V
IH
X
X
X
X
PSRAM Hi-Z
PSRAM Deep
Power-Down
X
V
IL
X
X
X
X
PSRAM Hi-Z
相關PDF資料 |
PDF描述 |
|---|---|
| M36D0R6040B0ZAIF | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIT | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAI | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0 | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIE | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| M36D0R6040T0ZAIT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36DR216C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR232 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A120ZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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