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參數(shù)資料
| 型號(hào)： | M36D0R6040T0ZAIF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，頁(yè)）閃存和16兆位（最快1Mb × 16）移動(dòng)存儲(chǔ)芯片，多芯片封裝 |
| 文件頁(yè)數(shù)： | 13/18頁(yè) |
| 文件大?。?/td> | 329K |
| 代理商： | M36D0R6040T0ZAIF |
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M36D0R6040T0, M36D0R6040B0
Table 7. Flash Memory DC Characteristics - Currents
Note: 1. Sampled only, not 100% tested.
2. V
DDF
Dual Operation current is the sum of read and program or erase currents.
Table 8. Flash Memory DC Characteristics - Voltages
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
DDF
±1
μA
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
DDF
±1
μA
I
DD1
Supply Current
Asynchronous Read (f=6MHz)
E
F
= V
IL
, G
F
= V
IH
3
6
mA
I
DD2
Supply Current
(Reset)
RP
F
= V
SSF
± 0.2V
10
50
μA
I
DD3
Supply Current (Standby)
E
F
= V
DDF
± 0.2V
10
50
μA
I
DD4
Supply Current (Automatic
Standby)
E
F
= V
IL
, G
F
= V
IH
10
50
μA
I
DD5
(1)
Supply Current (Program)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DDF
10
20
mA
Supply Current (Erase)
V
PPF
= V
PPH
8
15
mA
V
PPF
= V
DDF
10
20
mA
I
DD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
Read in another Bank
13
26
mA
I
DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E
F
= V
DDF
± 0.2V
10
50
μA
I
PP1(1)
V
PPF
Supply Current (Program)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DDF
0.2
5
μA
V
PPF
Supply Current (Erase)
V
PPF
= V
PPH
2
5
mA
V
PPF
= V
DDF
0.2
5
μA
I
PP2
V
PPF
Supply Current (Read)
V
PPF
≤
V
DDF
0.2
5
μA
I
PP3(1)
V
PPF
Supply Current (Standby)
V
PPF
≤
V
DDF
0.2
5
μA
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
V
IL
Input Low Voltage
–0.5
0.4
V
V
IH
Input High Voltage
V
DDF
–0.4
V
DDF
+ 0.4
V
V
OL
Output Low Voltage
I
OL
= 100μA
0.1
V
V
OH
Output High Voltage
I
OH
= –100μA
V
DDF
–0.1
V
V
PP1
V
PPF
Program Voltage-Logic
Program, Erase
1
1.8
3.3
V
V
PPH
V
PPF
Program Voltage Factory
Program, Erase
11.4
12
12.6
V
V
PPLK
Program or Erase Lockout
0.4
V
V
LKO
V
DDF
Lock Voltage
1
V
V
RPH
RP
F
pin Extended High Voltage
3.3
V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36D0R6040B0ZAIF | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIT | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAI | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0 | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIE | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36D0R6040T0ZAIT | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36DR216C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR232 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A120ZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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