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參數(shù)資料
| 型號： | M36D0R6040T0ZAIF |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| 中文描述： | 64兆位（4Mb的x16插槽，多銀行，頁）閃存和16兆位（最快1Mb × 16）移動存儲芯片，多芯片封裝 |
| 文件頁數(shù)： | 8/18頁 |
| 文件大?。?/td> | 329K |
| 代理商： | M36D0R6040T0ZAIF |
M36D0R6040T0, M36D0R6040B0
8/18
FUNCTIONAL DESCRIPTION
The Flash memory and PSRAM components have
separate power supplies but share the same
grounds. They are distinguished by three Chip En-
able inputs: E
F
for the Flash memory and E1
P
and
E2
P
for the PSRAM.
Recommended operating conditions do not allow
more than one device to be active at a time. The
most common example is simultaneous read oper-
ations on the Flash memory and the PSRAM,
which would result in a data bus contention.
Therefore it is recommended to put the other de-
vices in the high impedance state when reading
the selected device.
Figure 4. Functional Block Diagram
AI09204
E1
P
G
P
W
P
E2
P
UB
P
LB
P
DQ0-DQ15
V
DDF
A0-A19
A20-A21
16 Mbit
PSRAM
G
F
64 Mbit
Flash
Memory
V
DDP
E
F
W
F
RP
F
WP
F
V
PPF
V
SS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M36D0R6040B0ZAIF | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIT | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0ZAI | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040T0 | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36D0R6040B0ZAIE | 64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M36D0R6040T0ZAIT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package |
| M36DR216C120ZA6T | 功能描述:閃存 16M (1Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| M36DR232 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product |
| M36DR232A120ZA6T | 功能描述:閃存 32M (2Mx16) 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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