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參數(shù)資料
| 型號： | M30L0R8000T0 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| 中文描述： | 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體 |
| 文件頁數(shù)： | 70/83頁 |
| 文件大?。?/td> | 1363K |
| 代理商： | M30L0R8000T0 |
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M30L0R8000T0, M30L0R8000B0
70/83
Figure 21. Buffer Program Flowchart and Pseudo Code
Note: 1. n + 1 is the number of data being programmed.
2. Next Program data is an element belonging to buffer_Program[].data; Next Program address is an element belonging to
buffer_Program[].address
3. Routine for Error Check by reading SR3, SR4 and SR1.
Buffer Program E8h
Command,
Start Address
AI08913b
Start
Write Buffer Data,
Start Address
YES
X = n
End
NO
Write n
(1)
,
Start Address
X = 0
Write Next Buffer Data,
Next Program Address
X = X + 1
Program
Buffer to Flash
Confirm D0h
Read Status
Register
NO
SR7 = 1
YES
Full Status
Register Check
(3)
Read Status
Register
NO
SR7 = 1
YES
Buffer_Program_command (Start_Address, n, buffer_Program[] )
/* buffer_Program [] is an array structure used to store the address and
data to be programmed to the Flash memory (the address must be within
the segment Start Address and Start Address+n) */
{
do {writeToFlash (
Start
_Address, 0xE8) ;
status_register=readFlash (
Start
_Address);
} while (status_register.SR7==0);
writeToFlash (
Start
_Address, n);
writeToFlash (buffer_Program[0].address, buffer_Program[0].data);
/*buffer_Program[0].address is the start address*/
x = 0;
while (x<n)
{ writeToFlash (buffer_Program[x+1].address, buffer_Program[x+1].data)
x++;
}
writeToFlash (
Start
_Address, 0xD0);
do {status_register=readFlash (
Start
_Address);
} while (status_register.SR7==0);
full_status_register_check();
}
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| M30L0R8000B0 | 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M30L0R8000T0ZAQ | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQE | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQF | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L0R8000T0ZAQT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M30L40C | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
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