參數(shù)資料
型號(hào)： M30L0R8000T0
廠商： 意法半導(dǎo)體
英文描述： 256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
中文描述： 256兆位（16Mb的x16插槽，多銀行，多層次，多突發(fā)）1.8V電源快閃記憶體
文件頁(yè)數(shù)： 54/83頁(yè)
文件大小： 1363K
代理商： M30L0R8000T0
M30L0R8000T0, M30L0R8000B0
54/83
Figure 18. Reset and Power-up AC Waveforms
Table 27. Reset and Power-up AC Characteristics
Note: 1. The device Reset is possible but not guaranteed if t
PLPH
< 50ns.
2. Sampled only, not 100% tested.
3. It is important to assert RP in order to allow proper CPU initialization during Power-Up or Reset.
Symbol
Parameter
Test Condition
85
Unit
t
PLWL
t
PLEL
t
PLGL
t
PLLL
Reset Low to
Write Enable Low,
Chip Enable Low,
Output Enable Low,
Latch Enable Low
During Program
Min
25
μs
During Erase
Min
25
μs
Other Conditions
Min
80
ns
t
PHWL
t
PHEL
t
PHGL
t
PHLL
Reset High to
Write Enable Low
Chip Enable Low
Output Enable Low
Latch Enable Low
Min
30
ns
t
PLPH (1,2)
RP Pulse Width
Min
50
ns
t
VDHPH (3)
Supply Voltages High to Reset High
Min
100
μs
AI06976
W,
RP
E, G,
VDD, VDDQ
tVDHPH
tPLPH
Power-Up
Reset
tPLWL
tPLEL
tPLGL
tPLLL
L
tPHWL
tPHEL
tPHGL
tPHLL
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