參數(shù)資料
型號: M30620FCPFP
廠商: Renesas Technology Corp.
英文描述: SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
中文描述: 單片16位CMOS微機
文件頁數(shù): 76/87頁
文件大?。?/td> 901K
代理商: M30620FCPFP
M16C/62 Group (M16C/62P, M16C/62PT)
5. Electrical Characteristics (M16C/62PT)
4
8
f
3
0
0
2
,
0
.
o
N
0
1
e
R
page 76
V
CC1
= V
CC2
= 5V
Table 5.58
Electrical Characteristics (2)
(1
)
y
m
b
o
l
S
S
t
a
Typ.
n
d
a
r
d
Unit
Measuring condition
M
i
n
.
M
a
x
.
P
a
r
a
m
e
t
e
r
I
C
C
P
(
o
V
C
w
C
e
1
=
r
s
4
u
.
p
0
p
t
l
y
5
c
.
u
5
r
V
r
e
)
n
t
o
No division, PLL operation
No division, Ring oscillation
m
A
In single-chip mode, the output
pins are open and other pins are
V
SS
14
20
f(BCLK)=24MHz,
No division, PLL operation
m
A
1
8
f(BCLK)=24MHz,
Mask ROM
2
7
Flash memory
15
m
A
Flash memory
Program
V
CC1
=5.0V
f(BCLK)=10MHz,
f(BCLK)=10MHz,
2
5
m
A
Flash memory
Erase
a
s
k
R
V
CC1
=5.0V
f(XCIN)=32kHz,
T
opr
=25
°
C
3
.
0
μ
A
A
μ
A
μ
A
Stop mode,
f(BCLK)=32kHz,
(2)
Oscillation capacity High
f(BCLK)=32kHz,
Wait mode
(2)
,
Oscillation capacity
Low
7
.
5
μ
A
0
.
8
2
.
0
μ
A
M
F
a
l
a
s
s
k
h
R
m
O
e
M
m
o
r
y
N
O
T
E
1
S
.
:
e
i
h
e
R
T
W
.
T
4
.
f
e
e
h
s
t
r
r
s
I
d
I
d
I
d
e
s
o
i
n
n
i
o
n
d
d
e
t
e
t
e
t
c
n
e
i
c
i
s
4
:
3
:
2
:
e
t
a
s
d
=
i
m
t
i
p
V
V
V
t
o
-
e
s
a
C
C
C
V
C
0
o
t
h
o
n
2
7
2
6
2
5
C
o
e
c
b
b
b
1
=
8
r
a
m
u
r
i
t
i
t
i
t
V
C
5
t
e
e
m
r
e
o
f
o
f
o
f
C
2
=
,
V
u
s
r
y
w
C
R
V
C
V
C
i
n
i
n
h
2
2
2
4
v
.
e
g
w
e
n
r
r
r
0
r
s
f
C
h
t
h
e
g
e
g
e
g
t
o
i
o
3
i
c
e
i
s
i
s
i
s
5
n
2
h
f
t
e
t
e
t
e
.
.
o
r
r
r
5
=
V
,
-
4
V
S
0
S
=
t
o
0
1
V
2
a
°
t
C
T
o
p
r
=
-
2
0
t
o
8
5
°
C
/
-
4
0
t
o
8
5
°
C
,
f
(
B
C
L
K
)
=
2
4
M
H
z
u
n
l
e
s
s
o
t
h
e
r
w
i
s
e
s
p
e
c
i
f
i
e
d
.
v
t
i
4
r
t
i
t
p
e
°
C
d
o
n
V
5
2
3
.
e
t
h
l
e
o
w
p
r
i
n
o
g
g
r
b
a
i
m
t
s
t
o
s
e
b
e
t
o
e
x
e
1
c
u
(
t
e
e
d
t
e
e
c
x
t
i
i
o
s
t
s
.
I
d
i
t
l
i
t
d
n
c
i
r
c
u
i
t
e
n
a
b
l
e
d
)
.
R
R
m
A
1
.
8
Wait mode
A
Low power dissipation mode,
ROM
(3)
A
M
O
M
Low power dissipation mode,
RAM
(3)
f(BCLK)=32kHz
Low power dissipation mode,
Flash memory
(3)
420
μ
A
f(BCLK)=32kHz,
A
F
l
a
s
h
m
e
m
o
r
y
2
5
Ring oscillation,
50
mA
1
2
5
I
d
I
d
I
d
e
t
4
Voltage down detection dissipation current
(4)
Reset area detection dissipation current
(4)
RAM retention limit detection dissipation current
(4)
4
8
6
μ
0.7
1.2
1
e
t
3
e
t
2
.
1
No division, Ring oscillation
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