參數(shù)資料
型號: M30620FCPFP
廠商: Renesas Technology Corp.
英文描述: SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
中文描述: 單片16位CMOS微機(jī)
文件頁數(shù): 37/87頁
文件大小: 901K
代理商: M30620FCPFP
M16C/62 Group (M16C/62P, M16C/62PT)
5. Electrical Characteristics (M16C/62P)
4
8
f
3
0
0
2
,
0
.
o
N
0
1
e
R
page 37
V
CC1
= V
CC2
= 5V
Table 5.12
Electrical Characteristics (2)
(1
)
y
m
b
o
l
S
S
t
a
T
n
y
d
p
a
.
r
d
U
n
i
t
M
e
a
s
u
r
i
n
g
c
o
n
d
i
t
i
o
n
M
i
n
.
M
0
a
x
.
P
a
r
a
m
e
t
e
r
I
CC
Power supply current
(V
CC1
=4.0 to 5.5V)
N
N
o
o
d
d
i
i
v
v
i
i
s
s
i
i
o
o
n
n
,
,
P
R
L
i
L
n
o
p
o
e
s
r
a
i
l
t
a
i
o
t
n
i
o
m
A
In single-chip mode, the output
pins are open and other pins are
V
SS
14
2
f(
B
C
L
K
)
=
2
4
M
H
z
,
N
o
o
d
i
v
i
s
i
o
n
,
P
L
L
o
p
e
r
a
t
i
o
n
m
A
18
f(
B
C
L
K
)
=
2
4
M
H
z
,
Mask ROM
2
7
Flash memory
1
5
m
A
Flash memory
Program
V
C
f(
B
C
C
1
=
L
5
K
.
)
0
=
V
1
f(
B
C
L
K
)
=
1
0
M
H
z
,
2
5
m
A
Flash memory
Erase
V
C
f(
X
C
1
=
I
N
5
)
.
=
0
3
V
2
0
M
H
z
,
T
o
p
r
=2
5
°
C
3.0
μ
A
S
t
o
p
m
o
d
e
,
f(BCLK)=32kHz,
W
a
i
t
m
o
d
O
s
c
i
l
l
a
t
i
o
n
f(BCLK)=32kHz,
W
a
i
t
m
o
d
O
s
c
i
l
l
a
t
i
o
n
e
c
a
(
p
2
a
)
,
c
i
t
y
H
i
g
h
7.5
A
0.8
2.0
μ
A
M
F
a
l
a
s
s
k
h
R
m
O
e
M
m
o
r
y
NO
T
E
1
2
3
4
S:
.
R
.
W
.
T
.
I
d
e
i
h
e
I
d
I
d
I
d
f
t
i
t
e
h
s
i
e
e
e
r
s
t
t
t
e
o
i
n
4
:
3
:
2
:
n
n
d
d
c
e
i
c
i
s
V
V
V
e
t
a
s
C
C
C
d
i
m
t
i
p
2
2
2
t
e
s
a
7
6
5
o
V
C
o
t
h
o
n
b
i
b
i
b
i
C
e
m
c
u
o
t
o
t
o
1
=
r
a
V
C
t
e
e
m
r
r
e
V
C
f
V
f
V
C
r
t
R
R
R
2
=
u
s
y
w
2
2
2
n
n
e
e
e
e
4
.
2
w
n
g
i
g
i
g
i
C
h
t
h
s
t
s
t
s
t
t
o
3
i
c
e
e
e
e
5
2
h
f
r
r
r
.
.
o
5
V
,
V
S
S
=
0
V
a
t
T
o
p
r
=
-
2
0
t
o
8
5
°
C
/
-
4
0
t
o
8
5
°
C
,
f
(
B
C
L
K
)
=
2
4
M
H
z
u
n
l
e
s
s
o
t
h
e
r
w
i
s
e
s
p
e
c
i
f
i
e
d
.
r
i
p
e
t
d
o
n
i
i
g
f
e
h
r
r
r
t
h
l
e
o
w
p
r
i
n
o
g
g
r
b
a
i
m
t
s
t
o
s
e
b
e
t
o
e
x
e
1
c
u
(
t
e
e
d
t
e
e
c
x
t
i
o
s
t
s
.
t
l
i
t
d
i
n
c
i
r
c
u
i
t
e
n
a
b
l
e
d
)
.
f
C
C
m
A
1
.
8
Wait mode
μ
A
L
R
f(
o
w
p
(
o
3
w
)
e
r
d
i
s
s
i
p
a
t
i
o
n
m
o
d
e
,
O
M
C
k
H
z
,
μ
A
Mask ROM
L
R
f(
L
F
o
w
M
C
w
a
s
p
(
L
p
h
o
3
w
)
e
r
d
i
s
s
i
p
a
t
i
o
n
m
o
d
e
,
A
B
o
K
o
m
)
w
e
=
3
e
m
2
r
k
d
o
H
i
s
r
y
z
s
(
420
μ
A
i
3
p
)
a
t
i
o
n
m
o
d
e
,
l
B
C
L
K
)
=
3
2
k
H
z
,
μ
A
Flash memory
2
5
Ring oscillation,
5
0
m
A
1
g
c
l
n
2
5
e
c
(
a
2
p
)
,
a
c
i
t
y
L
o
w
I
det4
I
det3
Voltage down detection dissipation current
(4)
Reset area detection dissipation current
(4)
4
8
μ
A
μ
A
μ
A
0.7
1.2
I
det2
RAM retention limit detection dissipation current
(4)
6
1.1
N
d
i
v
i
s
i
o
n
,
R
i
n
g
o
s
c
i
l
l
a
t
i
o
n
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