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參數(shù)資料
| 型號： | M306N0MCT |
| 英文描述： | PTSE 19C 19#20 PIN PLUG 023 |
| 中文描述： | 60瓦，225至400 MHz受控的“Q”寬帶射頻功率晶體管NPN硅 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 137K |
| 代理商： | M306N0MCT |
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
Built–In Matching Network for Broadband Operation Using Double
Match Technique
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS*
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V
CEO
V
CBO
V
EBO
P
D
33
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Total Device Dissipation @ T
C
= 25
°
C (1)
Derate above 25
°
C
146
0.83
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.2
°
C/W
ELECTRICAL CHARACTERISTICS*
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
V
(BR)CEO
33
—
—
Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
V
(BR)CES
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
V
(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
—
—
2.0
mAdc
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Order this document
by
2N6439/D
SEMICONDUCTOR TECHNICAL DATA
1
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