參數(shù)資料
型號(hào)： M30218MFCFP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 10 MHz, MICROCONTROLLER, PQFP100
封裝： PLASTIC, QFP-100
文件頁數(shù)： 40/161頁
文件大?。?/td> 2043K
代理商： M30218MFCFP
Under
development
Tentative Specifications REV.A1
Specifications in this manual are tentative and subject to change.
Mitsubishi microcomputers
M30218 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
134
Pull-down
MASK OPTION OF PULL-DOWN RESISTOR (object product: mask ROM version)
Whether built-in pull-down resistors are connected or not to high-breakdown voltage ports P20 to P27, P30
to P37,and P40 to P43 can be specified in ordering mask ROM. The option type can be specified from
among 7 types; A to G.
A
B
C
D
E
F
G
P20
P21
P22
P23
P24
P25
P26
P27
P30
P31
P32
P33
P34
P35
P36
P37
P40
P41
P42
0
00
0
P43
0
1
0
00
0
1
11
00
0
1
11
00
0
1
11
00
0
1
11
0
1
11
1
Note 1: The electrical characteristics of high-breakdown voltage ports P20 to P27, P30 to P37,and P40 to
P43’s built-in pull-down resistors are the same as that of high-breakdown voltage ports P00 to P07.
Note 2: The absolute maximum ratings of power dissipation may be exceed owing to the number of built-in
pull-down resistor. After calculating the power dissipation, specify the option type.
Note 3: The option types B to G cannot be specified because these types are currently under development.
Power Dissipation Calculating Method
(Fixed number depending on microcomputer’s standard)
VOH output fall voltage of high-breakdown port
2 V (max.); | Current value | = at 18 mA
Resistor value = 68 k
(min.)
Power dissipation of internal circuit (CPU, ROM, RAM etc.) = 5 V X 38 mA = 190 mW
(Fixed number depending on use condition)
Apply voltage to VEE pin: Vcc – 50 V
Timing number a; digit number b; segment number c
Ratio of Toff time corresponding Tdisp time: 1/16
Turn ON segment number during repeat cycle: d
All segment number during repeat cycle: e (= a X c)
Total number of built-in resistor: for digit; f, for segment; g
Digit pin current value h (mA)
Segment pin current value i (mA)
(1) Digit pin power dissipation
{h X b X (1–Toff / Tdisp) X voltage} / a
(2) Segment pin power dissipation
{i X d X (1–Toff / Tdisp) X voltage} / a
(3) Pull-down resistor power dissipation (digit)
{power dissipation per 1 digit X (b X f / b) X (1–Toff / Tdisp) } / a
(4) Pull-down resistor power dissipation (segment)
{power dissipation per 1 segment X (d X g / c) X (1–Toff / Tdisp) } / a
(5) Internal circuit power dissipation (CPU, ROM, RAM etc.) = 190 mW
(1) + (2)+ (3) + (4) + (5) = X mW
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