參數(shù)資料
型號(hào)： M2V56S20TP-6
廠商： Mitsubishi Electric Corporation
英文描述： 128 x 64 pixel format, LED Backlight available
中文描述： 256M同步DRAM
文件頁(yè)數(shù)： 24/49頁(yè)
文件大?。?/td> 244K
代理商： M2V56S20TP-6
Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
24
[ Read with Auto-Precharge Interrupted by Read to another Bank ]
Burst read with auto-precharge can be interrupted by read to
another
bank. Next ACT comand can
be issued after (BL+tRP) from the READA. Auto-precharge interruption by a command to the same
bank is inhibited.
READA interrupted by READ to another bank (CL=2, BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Read
Ya
1
00
Qa0
Qa1
Read
Yb
0
10
BL
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
Qb0
Qb1
Qb2
Qb3
Full Page Burst
Full page burst length is available for only the sequential burst type. Full page burst read / write is
repeated untill a Precharge or a Burst Terminate command is issued. In case of the full page burst,
a read / write with auto-precharge command is illegal.
Single Write
When sigle write mode is set, burst length for write is always one, independently of Burst Length
defined by (A2-0).
相關(guān)PDF資料
PDF描述
M2V56S30TP-6 128 x 64 pixel format, LED Backlight available
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M2V56S20TP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S20TP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30AKT 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30AKT-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30AKT-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
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