參數(shù)資料
型號： M2V56S20TP-6
廠商： Mitsubishi Electric Corporation
英文描述： 128 x 64 pixel format, LED Backlight available
中文描述： 256M同步DRAM
文件頁數(shù)： 23/49頁
文件大小： 244K
代理商： M2V56S20TP-6
Feb.2000
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
SDRAM (Rev.1.1)
Single Data Rate
M2V56S20/ 30/ 40/ TP -6, -7, -8
256M Synchronous DRAM
23
[ Write with Auto-Precharge Interrupted by Write / Read to another Bank ]
Burst write with auto-precharge can be interrupted by write or read to
another
bank. Next ACT
comand can be issued after (BL+tWR-1+tRP) from the WRITEA. Auto-precharge interruption by a
command to the same bank is inhibited.
WRITEA interrupted by WRITE to another bank (BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Db0
Db1
Db2
Db3
Write
Ya
1
00
Da0
Da1
Write
Yb
0
10
BL
tWR
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
WRITEA interrupted by READ to another bank (CL=2, BL=4)
CLK
Command
A0-9,11-12
A10
BA0-1
DQ
Write
Ya
1
00
Da0
Da1
Read
Yb
0
10
BL
tWR
tRP
ACT
Xa
Xa
00
interrupted
auto-precharge
activate
Qb0
Qb1
Qb2
Qb3
相關(guān)PDF資料
PDF描述
M2V56S30TP-6 128 x 64 pixel format, LED Backlight available
M2V56S40TP-6 128 x 64 pixel format, LED Backlight available
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參數(shù)描述
M2V56S20TP-7 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S20TP-8 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
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M2V56S30AKT-5 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30AKT-6 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
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