參數(shù)資料
型號: M2V12D30TP-75L
廠商: Mitsubishi Electric Corporation
英文描述: 512M Double Data Rate Synchronous DRAM
中文描述: 512M雙數(shù)據(jù)速率同步DRAM
文件頁數(shù): 30/38頁
文件大小: 754K
代理商: M2V12D30TP-75L
MITSUBISHI
ELECTRIC
-30-
M2S12D20/ 30TP -75, -75L, -10, -10L
512M Double Data Rate Synchronous DRAM
Feb. '02
MITSUBISHI LSIs
DDR SDRAM (Rev.1.1)
MITSUBISHI ELECTRIC
Burst read operation can be interrupted by a burst stop command(TERM). READ to TERM interval
is 1 CLK minimum. The time between TERM command to output disable equal to the CAS Latency.
As a result, READ to TERM interval determines valid data length to be output. The figure below
shows the example of BL=8.
[Read Interrupted by Burst Stop]
Read Interrupted by TERM (BL=8)
CL=2.5
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
/CLK
CLK
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
CL=2.0
Command
DQS
Command
DQ
Command
DQ
Q0
Q1
Q2
Q3
Q0
Q1
DQ
Q0
Q1
Q2
Q3
Q4
Q5
TERM
READ
READ
TERM
READ
TERM
DQS
DQS
相關(guān)PDF資料
PDF描述
M2S12D20TP-75L 512M Double Data Rate Synchronous DRAM
M2S12D30TP 512M Double Data Rate Synchronous DRAM
M2S12D30TP-75L 512M Double Data Rate Synchronous DRAM
M2S12D20TP-75 128 x 64 pixel format, LED Backlight available
M2V12D20TP-75 128 x 64 pixel format, LED Backlight available
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M2V28D20ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D20ATP-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D30ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D30ATP-75 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM
M2V28D40ATP-10 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM