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參數資料
| 型號： | M2S56D30AKT-75 |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 8 DDR DRAM, 0.75 ns, PDSO64 |
| 封裝： | 0.40 MM PITCH, STSOP-64 |
| 文件頁數： | 19/41頁 |
| 文件大?。?/td> | 638K |
| 代理商： | M2S56D30AKT-75 |
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26
DDR SDRAM
E0338M10 (Ver.1.0)
(Previous Rev.1.54E)
Jan. '03 CP(K)
M2S56D20/ 30/ 40ATP
256M Double Data Rate Synchronous DRAM
M2S56D20/ 30/ 40AKT
The DDR SDRAM has four independent banks. Each bank is activated by the ACT command with the bank
addresses (BA0,1). A row is indicated by the row address A12-0. The minimum activation interval between
banks is tRRD.
BANK ACTIVATE (ACT)
OPERATIONAL DESCRIPTION
The PRE command deactivates the bank indicated by BA0,1. When multiple banks are active, the precharge
all command (PREA,PRE+A10=H) is available to deactivate all banks at the same time. After tRP from the
precharge, an ACT command to the same bank can be issued.
PRECHARGE (PRE)
Bank Activation and Precharge All (BL=8, CL=2)
A precharge command can be issued after BL/2 time from a read command.
Precharge all
Command
A0-9,11
A10
BA0,1
DQ
ACT
Xa
00
READ
Y
0
00
ACT
Xb
01
PRE
tRRD
tRCD
1
ACT
Xb
01
tRAS
tRP
tRCmin
2 ACT command / tRCmin
DQS
Qa0
BL/2
Qa1 Qa2 Qa3 Qa4 Qa5 Qa6 Qa7
/CLK
CLK
相關PDF資料 |
PDF描述 |
|---|---|
| M2V56S30ATP-6 | 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| M30-6000206 | 2 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M30-6000406 | 4 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M30-6001106 | 11 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
| M30-6011006 | 20 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| M2S56D30AKT-75A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75AL | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30AKT-75L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
| M2S56D30ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:256M Double Data Rate Synchronous DRAM |
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