參數(shù)資料
型號: M29W160ET90ZA6E
廠商: 意法半導體
英文描述: CLAMP
中文描述: 16兆位(含2Mb x8或1兆x16插槽,引導塊)3V電源快閃記憶體
文件頁數(shù): 19/40頁
文件大小: 665K
代理商: M29W160ET90ZA6E
19/40
M29W160ET, M29W160EB
Figure 7. Data Polling Flowchart
Figure 8. Data Toggle Flowchart
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. Exposure to Abso-
lute Maximum Rating conditions for extended
periods may affect device reliability. These are
stress ratings only and operation of the device at
these or any other conditions above those indicat-
ed in the Operating sections of this specification is
not implied. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 8. Absolute Maximum Ratings
Note: 1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.
2. Maximum voltage may overshoot to V
CC
+2V during transition and for less than 20ns during transitions.
READ DQ5 & DQ7
at VALID ADDRESS
START
READ DQ7
at VALID ADDRESS
FAIL
PASS
AI03598
D=
DATA
YES
NO
YES
NO
DQ5
= 1
D=
DATA
YES
NO
READ DQ6
START
READ DQ6
TWICE
FAIL
PASS
AI01370C
D=
TOGGLE
NO
NO
YES
YES
DQ5
= 1
NO
YES
D=
TOGGLE
READ
DQ5 & DQ6
Symbol
Parameter
Min
Max
Unit
T
BIAS
Temperature Under Bias
–50
125
°C
T
STG
Storage Temperature
–65
150
°C
V
IO
Input or Output Voltage
(1,2)
–0.6
V
CC
+0.6
V
V
CC
Supply Voltage
–0.6
4
V
V
ID
Identification Voltage
–0.6
13.5
V
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