參數(shù)資料
型號(hào)： M29W160DB70ZA1T
廠商： 意法半導(dǎo)體
英文描述： 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
中文描述： 16兆位的2Mb x8或1兆x16插槽，啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù)： 32/40頁
文件大?。?/td> 665K
代理商： M29W160DB70ZA1T
M29W160ET, M29W160EB
32/40
Table 24. Device Geometry Definition
Address
Data
Description
Value
x16
x8
27h
4Eh
0015h
Device Size = 2
n
in number of Bytes
2 MByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of Bytes in multi-Byte program or page = 2
n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 Byte
16 KByte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 Byte
8 KByte
35h
36h
6Ah
6Ch
0000h
0000h
Region 3 Information
Number of identical size erase block = 0000h+1
1
37h
38h
6Eh
70h
0080h
0000h
Region 3 Information
Block size in Region 3 = 0080h * 256 Byte
32 KByte
39h
3Ah
72h
74h
001Eh
0000h
Region 4 Information
Number of identical-size erase block = 001Eh+1
31
3Bh
3Ch
76h
78h
0000h
0001h
Region 4 Information
Block size in Region 4 = 0100h * 256 Byte
64 KByte
相關(guān)PDF資料
PDF描述
M29W160DB70ZA6T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90N1T Dual Positive-Edge-Triggered D-Type Flip-Flop 8-DSBGA -40 to 85
M29W160DB90N6T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90ZA1T 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
M29W160DB90ZA6T DUAL 2-INPUT EXCLUSIVE-OR GATE 8-DSBGA -40 to 85
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W160DB70ZA6 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB70ZA6E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB70ZA6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB70ZA6T 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
M29W160DB90M1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
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