參數(shù)資料
型號(hào): M29W160DB90ZA6T
廠商: 意法半導(dǎo)體
英文描述: DUAL 2-INPUT EXCLUSIVE-OR GATE 8-DSBGA -40 to 85
中文描述: 16兆位的2Mb x8或1兆x16插槽,啟動(dòng)塊3V電源快閃記憶體
文件頁數(shù): 1/40頁
文件大小: 665K
代理商: M29W160DB90ZA6T
1/40
January 2004
M29W160ET
M29W160EB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
V
CC
=
2.7V to 3.6V for Program, Erase
and Read
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
10μs per Byte/Word typical
35 MEMORY BLOCKS
1 Boot Block (Top or Bottom Location)
2 Parameter and 32 Main Blocks
PROGRAM/ERASE CONTROLLER
Embedded Byte/Word Program
algorithms
ERASE SUSPEND and RESUME MODES
Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
64 bit Security Code
LOW POWER CONSUMPTION
Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Top Device Code M29W160ET: 22C4h
Bottom Device Code M29W160EB: 2249h
Figure 1. Packages
TSOP48 (N)
12 x 20mm
TFBGA48 (ZA)
6 x 8mm
FBGA
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