參數(shù)資料
型號(hào)： M29W040B90N6E
廠商： 意法半導(dǎo)體
英文描述： 4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
中文描述： 4兆位512KB的× 8，統(tǒng)一座低電壓?jiǎn)坞娫撮W存
文件頁數(shù)： 1/20頁
文件大?。?/td> 161K
代理商： M29W040B90N6E
1/20
September 2005
M29W040B
4 Mbit (512Kb x8, Uniform Block)
Low Voltage Single Supply Flash Memory
■
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
■
ACCESS TIME: 55ns
■
PROGRAMMING TIME
– 10μs per Byte typical
■
8 UNIFORM 64 Kbytes MEMORY BLOCKS
■
PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■
LOW POWER CONSUMPTION
– Standby and Automatic Standby
■
100,000 PROGRAM/ERASE CYCLES per
BLOCK
■
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E3h
■
ECOPACK
PACKAGES AVAILABLE
TSOP32 (N)
8 x 20mm
PLCC32 (K)
TSOP32 (NZ)
8 x 14mm
Figure 1. Logic Diagram
AI02953
19
A0-A18
W
DQ0-DQ7
VCC
M29W040B
G
E
VSS
8
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M29W040B90N6F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B90N6T 功能描述:閃存 4M (512Kx8) 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29W040B90NZ1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B90NZ1E 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
M29W040B90NZ1F 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
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