參數(shù)資料
型號(hào)： M29W116BT
廠商： 意法半導(dǎo)體
英文描述： 16Mbit(2Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(16Mb閃速存儲(chǔ)器)
中文描述： 16兆（2Mbx8，引導(dǎo)塊）低電壓?jiǎn)坞娫撮W存（16Mb的閃速存儲(chǔ)器）
文件頁數(shù)： 1/2頁
文件大?。?/td> 35K
代理商： M29W116BT
B29W116B/811
Complete data available on
DATA-on-DISC CD-ROM
or at
www.st.com
1/2
M29W116BT
M29W116BB
16 Mbit (2Mb x8, Boot Block)
Low Voltage Single Supply Flash Memory
DATA BRIEFING
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 80ns
FAST PROGRAMMING TIME: 13
μ
s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
MEMORY BLOCK for SECURITY CODE
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
BLOCK PROTECTION ACCESS COMMAND
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
BYPASS MODE
– Faster Programming Sequences
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W116BT: C7h
– Device Code, M29W116BB: 4Ch
DESCRIPTION
The M29W116B is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
CC
supply. For
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
AI00903B
21
A0-A20
W
DQ0-DQ7
VCC
M29W116BT
M29W116BB
E
VSS
8
G
RP
RB
Logic Diagram
TSOP40 (N)
10 x 20 mm
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