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參數(shù)資料
| 型號(hào)： | M29W160BT |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 16Mbit(2Mbx8 or 1Mbx16, Boot Block) Low Voltage Single Supply Flash Memory(16Mb閃速存儲(chǔ)器) |
| 中文描述： | 16兆（2Mbx8或1Mbx16，引導(dǎo)塊）低電壓?jiǎn)坞娫撮W存（16Mb的閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | M29W160BT |
B29W160B/811
Completedata availableon
DATA-on-DISCCD-ROM
orat
www.st.com
1/4
M29W160BT
M29W160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Low Voltage Single Supply Flash Memory
DATABRIEFING
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 80ns
FASTPROGRAMMING TIME
– 13
μ
s by Byte/Wordtypical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byteor Word-by-Word
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCK for SECURITY CODE
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
BLOCK PROTECTION ACCESS COMMAND
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
BYPASSMODE
– Faster ProgrammingSequences
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29W160BT:22C4h
– Device Code, M29W160BB:2249h
DESCRIPTION
TheM29W160Bisa non-volatilememorythatmay
be erasedelectricallyat theblock or chipleveland
programmedin-systemona Byte-by-Byteor Word-
by-Wordbasisusingonlya single2.7Vto3.6VV
CC
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
AI00981
20
A0-A19
W
DQ0-DQ14
VCC
M29W160BT
M29W160BB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Logic Diagram
44
1
SO44 (M)
TSOP48 (N)
12 x 20 mm
BGA
FBGA48 (ZC)
8 x 6 solder balls
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M29W160DB90ZA1E | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90ZA1F | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90ZA6 | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90ZA6E | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
| M29W160DB90ZA6F | 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29W160BT120M1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W160BT120M6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W160BT120N1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W160BT120N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory |
| M29W160BT120ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory |
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