參數(shù)資料
型號: M29W160BB
廠商: 意法半導體
英文描述: 16Mbit(2Mbx8 or 1Mbx16, Boot Block) Low Voltage Single Supply Flash Memory(16Mb閃速存儲器)
中文描述: 16兆(2Mbx8或1Mbx16,引導塊)低電壓單電源閃存(16Mb的閃速存儲器)
文件頁數(shù): 1/4頁
文件大小: 35K
代理商: M29W160BB
B29W160B/811
Completedata availableon
DATA-on-DISCCD-ROM
orat
www.st.com
1/4
M29W160BT
M29W160BB
16 Mbit (2Mb x8 or 1Mb x16, Boot Block)
Low Voltage Single Supply Flash Memory
DATABRIEFING
2.7V to 3.6VSUPPLYVOLTAGEfor
PROGRAM, ERASEand READ OPERATIONS
FASTACCESS TIME: 80ns
FASTPROGRAMMING TIME
– 13
μ
s by Byte/Wordtypical
PROGRAM/ERASECONTROLLER (P/E.C.)
– ProgramByte-by-Byteor Word-by-Word
– StatusRegister bits and Ready/BusyOutput
MEMORYBLOCK for SECURITY CODE
MEMORYBLOCKS
– BootBlock (Top or Bottomlocation)
– Parameterand Main blocks
BLOCK, MULTI-BLOCKand CHIPERASE
MULTI BLOCKPROTECTION/TEMPORARY
UNPROTECTION MODES
BLOCK PROTECTION ACCESS COMMAND
ERASE SUSPEND and RESUME MODES
– Read and Program anotherBlockduring
Erase Suspend
BYPASSMODE
– Faster ProgrammingSequences
LOW POWER CONSUMPTION
– Stand-byand AutomaticStand-by
100,000 PROGRAM/ERASECYCLES per
BLOCK
20 YEARSDATARETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– ManufacturerCode: 0020h
– Device Code, M29W160BT:22C4h
– Device Code, M29W160BB:2249h
DESCRIPTION
TheM29W160Bisa non-volatilememorythatmay
be erasedelectricallyat theblock or chipleveland
programmedin-systemona Byte-by-Byteor Word-
by-Wordbasisusingonlya single2.7Vto3.6VV
CC
supply. For Program and Erase operations the
necessary high voltages are generated internally.
The device can also be programmed in standard
programmers.
AI00981
20
A0-A19
W
DQ0-DQ14
VCC
M29W160BT
M29W160BB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
Logic Diagram
44
1
SO44 (M)
TSOP48 (N)
12 x 20 mm
BGA
FBGA48 (ZC)
8 x 6 solder balls
相關PDF資料
PDF描述
M29W160BT 16Mbit(2Mbx8 or 1Mbx16, Boot Block) Low Voltage Single Supply Flash Memory(16Mb閃速存儲器)
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