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參數(shù)資料
| 型號(hào)： | M29KW032E90N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座3V電源LightFlash⑩記憶 |
| 文件頁數(shù)： | 9/30頁 |
| 文件大?。?/td> | 234K |
| 代理商： | M29KW032E90N1T |
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M29KW032E
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. Failure to observe a valid sequence of Bus
Write operations will result in the memory return-
ing to Read mode. The long command sequences
are imposed to maximize data security.
Refer to Tables 4 and 5, for a summary of the com-
mands.
Read/Reset Command.
The Read/Reset command returns the memory to
its Read mode where it behaves like a ROM or
EPROM, unless otherwise stated. It also resets
the errors in the Status Register. Either one or
three Bus Write operations can be used to issue
the Read/Reset command.
The Read/Reset Command can be issued, be-
tween Bus Write cycles before the start of a pro-
gram or erase operation, to return the device to
read mode. Once the program or erase operation
has started the Read/Reset command is no longer
accepted. The Read/Reset command is executed
regardless of the value of V
PP
(V
IL
, V
IH
or V
HH
).
Auto Select Command.
The Auto Select command is used to read the
Manufacturer Code and the Device Code. Three
consecutive Bus Write operations are required to
issue the Auto Select command. Once the Auto
Select command is issued the memory remains in
Auto Select mode until a Read/Reset command is
issued, all other commands are ignored. The Auto
Select command is executed regardless of the val-
ue of V
PP
(V
IL
, V
IH
or V
HH
).
From the Auto Select mode the Manufacturer
Code can be read using a Bus Read operation
with A0 = V
IL
and A1 = V
IL
. The other address bits
may be set to either V
IL
or V
IH
.
The Device Code can be read using a Bus Read
operation with A0 = V
IH
and A1 = V
IL
. The other
address bits may be set to either V
IL
or V
IH
.
Word Program Command.
The Word Program command can be used to pro-
gram a Word to the memory array. V
PP
must be
set to V
HH
during Word Program. If V
PP
is set to ei-
ther V
IL
or V
IH
the command will be ignored, the
data will remain unchanged and the device will re-
vert to Read/Reset mode. The command requires
four Bus Write operations, the final write operation
latches the address and data in the internal state
machine and starts the Program/Erase Controller.
During the program operation the memory will ig-
nore all commands. It is not possible to issue any
command to abort or pause the operation. Typical
program times are given in Table 6. Bus Read op-
erations during the program operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the program operation has completed the
memory will return to the Read mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read mode.
Note that the Program command cannot change a
bit set at ’0’ back to ’1’. One of the Erase Com-
mands must be used to set all the bits in a block or
in the whole memory from ’0’ to ’1’.
Multiple Word Program Command
The Multiple Word Program command can be
used to program large streams of data. It greatly
reduces the total programming time when a large
number of Words are written to the memory at any
one time. V
PP
must be set to V
HH
during Multiple
Word Program. If V
PP
is set to either V
IL
or V
IH
the
command will be ignored, the data will remain un-
changed and the device will revert to Read/Reset
mode.
It has four phases: the Setup Phase to initiate the
command, the Program Phase to program the
data to the memory, the Verify Phase to check that
the data has been correctly programmed and re-
program if necessary and the Exit Phase.
Setup Phase.
The Multiple Word Program com-
mand requires three Bus Write operations to ini-
tiate the command (refer to Table 5, Multiple Word
Program Command and Figure 5, Multiple Word
Program Flowchart). The Status Register Toggle
bit (DQ6) should be checked to verify that the op-
eration has started and the Multiple Word Program
bit (DQ0) checked to verify that the P/E.C. is ready
for the first Word.
Program Phase.
The Program Phase requires
n+1 cycles, where n is the number of Words, to ex-
ecute the programming phase (refer to Table 5,
Multiple Word Program Command and Figure 5,
Multiple Word Program Flowchart).
Three successive steps are required to issue and
execute the Program Phase of the command.
1. The fourth Bus Write operation of the command
latches the Start Address and the first Word to
be programmed. The Status Register Multiple
Word Program bit (DQ0) should be read to
check that the P/E.C. is ready for the next Word.
2. Each subsequent Word to be programmed is
latched with a new Bus Write operation. The
address can remain the Start Address, be
incremented or be any address in the same
block, as the device automatically increments
the address with each sucssesive Bus Write
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| M29KW032E90N3T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA6T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA3T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA1T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29KW032E90N3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
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