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參數(shù)資料
| 型號： | M29KW032E90N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座3V電源LightFlash⑩記憶 |
| 文件頁數(shù)： | 11/30頁 |
| 文件大小： | 234K |
| 代理商： | M29KW032E90N1T |
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M29KW032E
Table 4. Standard Commands
Note:
X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The
Command Interface only uses A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ15 are Don’t Care.
Table 5. Multiple Word Program Command
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check
that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Don’t Care, n =
number of Words to be programmed.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. T
A
= 25°C, V
PP
= 12V.
Table 7. Multiple Word Program Timings
Note: 1. MWP = Multiple Word Program.
Command
L
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1
X
F0
3
555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Word Program
4
555
AA
2AA
55
555
A0
PA
PD
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Phase
L
Bus Write Operations
1st
2nd
3rd
4th
5th
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Program
3+n
+1
555
AA
2AA
55
555
20
PA1
PD1
PA1
PD2
PA1
PAn
NOT
PA1
X
Verify
n+1
PA1
PD1
PA1
PD2
PA1
PD3
PA1
PD4
PA1
PD5
PA1
PAn
NOT
PA1
X
Parameter
Min
Typ
(1)
Typical after
10k W/E Cycles
(1)
Max
Unit
Chip Erase
21
25
120
s
Block Erase (128 KWords)
1.5
6
s
Program (Word)
9
250
μs
Chip Program (Multiple Word)
4
35
s
Chip Program (Word by Word)
18
35
s
Program/Erase Cycles (per Block)
10,000
cycles
Symbol
Parameter
Min
Typ
Max
Unit
t
MWP-SETUP
MWP Setup time
500
ns
t
MWP-PROG
MWP Program Time
9
250
μs
t
MWP-TRAN
MWP Program to Verify transition
2
10
20
μs
t
MWP-END
MWP Verify to End transition
2
3
μs
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PDF描述 |
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| M29KW032E90N3T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA6T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA3T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA1T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29KW032E90N3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
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