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參數(shù)資料
| 型號： | M29KW032E90N1T |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| 中文描述： | 32兆位的2Mb x16插槽，統(tǒng)一座3V電源LightFlash⑩記憶 |
| 文件頁數(shù)： | 4/30頁 |
| 文件大?。?/td> | 234K |
| 代理商： | M29KW032E90N1T |
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M29KW032E
4/30
SUMMARY DESCRIPTION
The M29KW032E LightFlash
is a 32 Mbit (2Mb
x16) non-volatile memory that can be read, erased
and reprogrammed. Read operations can be per-
formed using a single low voltage (2.7 to 3.6V)
supply. Program and Erase operations require an
additional V
PP
(11.4 to 12.6) power supply. On
power-up the memory defaults to its Read mode
where it can be read in the same way as a ROM or
EPROM.
The memory is divided into 16 uniform blocks that
can be erased independently so it is possible to
preserve valid data while old data is erased (see
Figures 2, Block Addresses). Program and Erase
commands are written to the Command Interface
of the memory. An on-chip Program/Erase Con-
troller (P/E.C.) simplifies the process of program-
ming or erasing the memory by taking care of all of
the special operations that are required to update
the memory contents.
The M29KW032E LightFlash features a new
command, Multiple Word Program, used to pro-
gram large streams of data. It greatly reduces the
total programming time when a large number of
Words are written to the memory at any one time.
Using this command the entire memory can be
programmed in 2s, compared to 9s using the stan-
dard Word Program.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP48 (12 x 20mm)
and TFBGA48 (6 x 9mm, 0.8mm pitch) packages.
The memory is supplied with all the bits erased
(set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
AI04370
21
A0-A20
DQ0-DQ15
VCC
M29KW032E
E
VSS
16
G
RP
VPP
W
RB
A0-A20
Address Inputs
DQ0-DQ15
Data Inputs/Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset
RB
Ready/Busy Output
V
CC
Supply Voltage read
V
PP
Supply Voltage program erase
V
SS
Ground
NC
Not Connected Internally
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PDF描述 |
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| M29KW032E90N3T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA6T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA3T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA1T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E110N6T | 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M29KW032E90N3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90N6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA1T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA3T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
| M29KW032E90ZA6T | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory |
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