參數(shù)資料
型號(hào)： M29KW016E100M1T
廠商： STMICROELECTRONICS
元件分類： PROM
英文描述： 1M X 16 FLASH 12V PROM, 100 ns, PDSO44
封裝： 0.525 INCH, PLASTIC, SO-44
文件頁數(shù)： 4/33頁
文件大小： 705K
代理商： M29KW016E100M1T
Obsolete
Product(s)
- Obsolete
Product(s)
M29KW016E
12/33
times are given in Table 6.. All Bus Read opera-
tions during the Chip Erase operation will output
the Status Register on the Data Inputs/Outputs.
See the section on the Status Register for more
details.
After the Chip Erase operation has completed the
memory will return to the Read Mode, unless an
error has occurred. When an error occurs the
memory will continue to output the Status Regis-
ter. A Read/Reset command must be issued to re-
set the error condition and return to Read Mode.
Table 4. Standard Commands
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal. The
Command Interface only uses A0-A10 and DQ0-DQ7 to verify the commands; A11-A19, DQ8-DQ15 are Don’t Care.
Table 5. Multiple Word Program Command
Note: A Bus Read must be done between each Write cycle where the data is programmed or verified, to Read the Status Register and check
that the memory is ready to accept the next data. NOT PA1 is any address that is not in the same block as PA1. X Don’t Care, n =
number of Words to be programmed.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. TA = 25°C, VPP = 12V.
Command
Le
ng
th
Bus Write Operations
1st
2nd
3rd
4th
5th
6th
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Read/Reset
1X
F0
3555
AA
2AA
55
X
F0
Auto Select
3
555
AA
2AA
55
555
90
Word Program
4
555
AA
2AA
55
555
A0
PA
PD
Block Erase
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Phase
Le
ng
th
Bus Write Operations
1st
2nd
3rd
4th
5th
Final -1
Final
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Data
Add
Dat
a
Program
3+n+1
555
AA
2AA
55
555
20
PA1
PD1
PA1
PD2
PA1
PAn
NOT
PA1
X
Verify
n+1
PA1
PD1
PA1
PD2
PA1
PD3
PA1
PD4
PA1
PD5
PA1
PAn
NOT
PA1
X
Parameter
Min
Typ (1)
Typical after
10k W/E Cycles (1)
Max
Unit
Chip Erase
11
25
120
s
Block Erase (128 KWords)
1.5
6
s
Program (Word)
9
250
s
Chip Program (Multiple Word)
2
35
s
Chip Program (Word by Word)
9
35
s
Program/Erase Cycles (per Block)
10,000
cycles
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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