參數(shù)資料
型號(hào)： M29F400BT90M6E
廠商： 意法半導(dǎo)體
英文描述： 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
中文描述： 4兆位（512KB的x8或256Kb的x16插槽，引導(dǎo)塊）單電源閃存
文件頁(yè)數(shù)： 14/40頁(yè)
文件大?。?/td> 215K
代理商： M29F400BT90M6E
Bus operations
M29F400BT, M29F400BB
14/40
3.5
Automatic Standby
If CMOS levels (V
CC
± 0.2V) are used to drive the bus and the bus is inactive for 150ns or
more the memory enters Automatic Standby where the internal Supply Current is reduced to
the CMOS Standby Supply Current, I
CC3
. The Data Inputs/Outputs will still output data if a
Bus Read operation is in progress.
3.6
Special bus operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require V
ID
to be
applied to some pins.
3.6.1
Electronic Signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in
Table 2.
and
Table 3.
, Bus Operations.
3.6.2
Block Protection
and
Blocks Unprotection
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. For further information refer to
Application Note AN1122, Applying Protection and Unprotection to M29 Series Flash.
Table 2.
Bus operations, BYTE = V
IL(1)
1.
X = V
IL
or V
IH
.
Operation
E
G
W
Address Inputs
DQ15A–1, A0-A17
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
V
IL
V
IL
V
IH
Cell Address
Hi-Z
Data Output
Bus Write
V
IL
V
IH
V
IL
Command Address
Hi-Z
Data Input
Output Disable
X
V
IH
V
IH
X
Hi-Z
Hi-Z
Standby
V
IH
X
X
X
Hi-Z
Hi-Z
Read Manufacturer
Code
V
IL
V
IL
V
IH
A0 = V
IL
, A1 = V
IL
, A9
= V
ID
, Others V
IL
or V
IH
Hi-Z
20h
Read Device Code
V
IL
V
IL
V
IH
A0 = V
IH
, A1 = V
IL
, A9
= V
ID
, Others V
IL
or V
IH
Hi-Z
D5h (M29F400BT)
D6h (M29F400BB)
相關(guān)PDF資料
PDF描述
M29F400BT90M6F 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
M29F400T 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory(4Mb閃速存儲(chǔ)器)
M29W004B 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器)
M29W004T 4Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory(4Mb閃速存儲(chǔ)器)
M29W008AB 8Mbit(1Mbx8, Boot Block) Low Voltage Single Supply Flash Memory(8Mb閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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M29F400BT90N1T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90N6 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400BT90N6T 功能描述:閃存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M29F400FB55D11 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Gel-pak, waffle pack, wafer, diced wafer on film
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